Ultrafast response of tunnel injected quantum dot based semiconductor optical amplifiers in the 1300 nm range

dc.contributor.authorPulka, Jaroslaw
dc.contributor.authorPiwonski, Tomasz
dc.contributor.authorHuyet, Guillaume
dc.contributor.authorHoulihan, John
dc.contributor.authorSemenova, E.
dc.contributor.authorLematre, A.
dc.contributor.authorMerghem, Kamel
dc.contributor.authorMartinez, Anthony
dc.contributor.authorRamdane, Abderrahim
dc.contributor.funderScience Foundation Ireland
dc.contributor.funderHigher Education Authority
dc.contributor.funderIrish Research Council for Science, Engineering and Technology
dc.contributor.funderEGIDE
dc.contributor.funderSeventh Framework Programme
dc.date.accessioned2017-07-28T10:48:30Z
dc.date.available2017-07-28T10:48:30Z
dc.date.issued2012
dc.description.abstractThe ultrafast gain and refractive index dynamics of tunnel injected quantum dot based semiconductor optical amplifiers in the 1300 nm range are investigated using a heterodyne pump probe technique. In the gain regime, ground state wavelengths exhibit full gain recovery in less than 10 ps up to 3 times transparency, attributed to enhanced carrier refilling via the injector layer. The effect of the injector can also been seen in unusual phase dynamics at excited state wavelengths at this injection level. (C) 2012 American Institute of Physics. (doi:10.1063/1.3686901)en
dc.description.sponsorshipScience Foundation Ireland (07/SRC/I1173, 07/IN.1/I929); Higher Education Authority (Program for Research in Third Level Institutions (2007-2011) via the INSPIRE program); EGIDE (French organisation Egide (Ulysses project))en
dc.description.statusPeer revieweden
dc.description.versionPublished Versionen
dc.format.mimetypeapplication/pdfen
dc.identifier.articleid71107
dc.identifier.citationPulka, J., Piwonski, T., Huyet, G., Houlihan, J., Semenova, E., Lematre, A., Merghem, K., Martinez, A. and Ramdane, A. (2012) 'Ultrafast response of tunnel injected quantum dot based semiconductor optical amplifiers in the 1300 nm range', Applied Physics Letters, 100(7), pp. 071107. doi: 10.1063/1.3686901en
dc.identifier.doi10.1063/1.3686901
dc.identifier.endpage4
dc.identifier.issn0003-6951
dc.identifier.issn1077-3118
dc.identifier.issued7
dc.identifier.journaltitleApplied Physics Lettersen
dc.identifier.startpage1
dc.identifier.urihttps://hdl.handle.net/10468/4305
dc.identifier.volume100
dc.language.isoenen
dc.publisherAIP Publishingen
dc.relation.projectinfo:eu-repo/grantAgreement/EC/FP7::SP3::PEOPLE/264687/EU/Postgraduate Research on Photonics as an Enabling Technology/PROPHET
dc.relation.urihttp://aip.scitation.org/doi/abs/10.1063/1.3686901
dc.rights© 2012 American Institute of Physics.This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. The following article appeared in Pulka, J., Piwonski, T., Huyet, G., Houlihan, J., Semenova, E., Lematre, A., Merghem, K., Martinez, A. and Ramdane, A. (2012) 'Ultrafast response of tunnel injected quantum dot based semiconductor optical amplifiers in the 1300 nm range', Applied Physics Letters, 100(7), pp. 071107 and may be found at http://aip.scitation.org/doi/abs/10.1063/1.3686901en
dc.subjectLinewidth enhancement factoren
dc.subjectLasersen
dc.subjectDynamicsen
dc.titleUltrafast response of tunnel injected quantum dot based semiconductor optical amplifiers in the 1300 nm rangeen
dc.typeArticle (peer-reviewed)en
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