The impact of forming gas annealing on the electrical characteristics of sulfur passivated Al2O3/In0.53Ga0.47As (110) metal-oxide-semiconductor capacitors

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dc.check.date2018-04-06
dc.check.infoAccess to this article is restricted until 12 months after publication at the request of the publisher.en
dc.contributor.authorFu, Yen-Chun
dc.contributor.authorPeralagu, Uthayasankaran
dc.contributor.authorMillar, David A. J.
dc.contributor.authorLin, Jun
dc.contributor.authorPovey, Ian M.
dc.contributor.authorLi, Xu
dc.contributor.authorMonaghan, Scott
dc.contributor.authorDroopad, Ravi
dc.contributor.authorHurley, Paul K.
dc.contributor.authorThayne, Iain G.
dc.contributor.funderEuropean Commissionen
dc.contributor.funderSeventh Framework Programmeen
dc.contributor.funderTokyo Electron Ltd., Japanen
dc.date.accessioned2017-05-11T15:10:03Z
dc.date.available2017-05-11T15:10:03Z
dc.date.issued2017-04-06
dc.date.updated2017-05-11T14:04:45Z
dc.description.abstractThis study reports the impact of forming gas annealing (FGA) on the electrical characteristics of sulfur passivated, atomic layer deposited Al2O3 gate dielectrics deposited on (110) oriented n- and p-doped In0.53Ga0.47 As layers metal-oxide-semiconductor capacitors (MOSCAPs). In combination, these approaches enable significant Fermi level movement through the bandgap of both n- and p-doped In0.53Ga0.47 As (110) MOSCAPs. A midgap interface trap density (Dit) value in the range 0.87−1.8×1012 cm−2eV−10.87−1.8×1012 cm−2eV−1 is observed from the samples studied. Close to the conduction band edge, a Dit value of 3.1×1011 cm−2eV−13.1×1011 cm−2eV−1 is obtained. These data indicate the combination of sulfur pre-treatment and FGA is advantageous in passivating trap states in the upper half of the bandgap of (110) oriented In0.53Ga0.47 As. This is further demonstrated by a reduction in border trap density in the n-type In0.53Ga0.47 As (110) MOSCAPs from 1.8×1012 cm−21.8×1012 cm−2 to 5.3×1011 cm−25.3×1011 cm−2 as a result of the FGA process. This is in contrast to the observed increase in border trap density after FGA from 7.3×1011 cm−27.3×1011 cm−2 to 1.4×1012 cm−21.4×1012 cm−2 in p-type In0.53Ga0.47 As (110) MOSCAPs, which suggest FGA is not as effective in passsivating states close to the valence band edge.en
dc.description.sponsorshipTokyo Electron Ltd. (Custom funding from the Semiconductor Research Corporation through DS Digital CMOS Technologies (Task ID: 2188.002)en
dc.description.statusPeer revieweden
dc.description.versionPublished Versionen
dc.format.mimetypeapplication/pdfen
dc.identifier.citationFu, Y.-C., Peralagu, U., Millar, D. A. J., Lin, J., Povey, I., Li, X., Monaghan, S., Droopad, R., Hurley, P. K. and Thayne, I. G. (2017) 'The impact of forming gas annealing on the electrical characteristics of sulfur passivated Al2O3/In0.53Ga0.47As (110) metal-oxide-semiconductor capacitors', Applied Physics Letters, 110(14), pp. 142905. doi:10.1063/1.4980012en
dc.identifier.doi10.1063/1.4980012
dc.identifier.endpage142905-6en
dc.identifier.issn0003-6951
dc.identifier.issued14en
dc.identifier.journaltitleApplied Physics Lettersen
dc.identifier.startpage142905-1en
dc.identifier.urihttps://hdl.handle.net/10468/3948
dc.identifier.volume110en
dc.language.isoenen
dc.publisherAIP Publishingen
dc.relation.projectinfo:eu-repo/grantAgreement/EC/FP7::SP1::ICT/619325/EU/Compound Semiconductors for 3D integration/COMPOSE3en
dc.rights© 2017, AIP Publishing. This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. The following article appeared in: Appl. Phys. Lett. 110, 142905 (2017) and may be found at http://aip.scitation.org/doi/pdf/10.1063/1.4980012en
dc.subjectIII-V semiconductorsen
dc.subjectElectrical hysteresisen
dc.subjectCapacitanceen
dc.subjectBand gapen
dc.subjectAtomic layer depositionen
dc.titleThe impact of forming gas annealing on the electrical characteristics of sulfur passivated Al2O3/In0.53Ga0.47As (110) metal-oxide-semiconductor capacitorsen
dc.typeArticle (peer-reviewed)en
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