Effect of low temperature RF plasma treatment on electrical properties of junctionless InGaAs MOSFETs

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dc.contributor.authorGomeniuk, Y. V.
dc.contributor.authorGomeniuk, Y. Y.
dc.contributor.authorRudenko, T. E.
dc.contributor.authorOkholin, P. N.
dc.contributor.authorGlotov, V. I.
dc.contributor.authorNazarova, T. M.
dc.contributor.authorDjara, Vladimir
dc.contributor.authorCherkaoui, Karim
dc.contributor.authorHurley, Paul K.
dc.contributor.authorNazarov, A. N.
dc.contributor.funderHorizon 2020en
dc.contributor.funderScience Foundation Irelanden
dc.date.accessioned2020-07-03T08:42:55Z
dc.date.available2020-07-03T08:42:55Z
dc.date.issued2019-03-02
dc.date.updated2020-07-03T08:17:29Z
dc.description.abstractIn this paper, we study the effect of low-temperature RF plasma treatment in forming gas (10%H2+90%N2) on the electrical characteristics of junctionless MOSFETs with n-In0.53Ga0.47As channel and an Al2O3 gate dielectric. The impact of plasma power density on the device parameters is investigated. It is found that RF plasma annealing with a low power density (0.5 W/cm2) at 150°C for 10 min provides substantial improvement of source/drain contacts resistance and the carrier mobility resulting in a considerable increase of the on-state current and transconductance. It also improves the subthreshold slope and reduces the fixed positive charge in Al2O3 under the gate, shifting the threshold voltage toward positive values. It is demonstrated that non-thermal factors play a principle role in modification of electrical properties of the JL MOSFETs under RF plasma treatment. Such treatment may be an efficient tool for the improvement of the performance of the advanced MOSFETs with III-V channel materials.en
dc.description.statusPeer revieweden
dc.description.versionAccepted Versionen
dc.format.mimetypeapplication/pdfen
dc.identifier.citationGomeniuk, Y. V., Gomeniuk, Y. Y., Rudenko, T. E., Okholin, P. N., Glotov, V. I., Nazarova, T. M., Djara, V., Cherkaoui, K., Hurley, P. K. and Nazarov, A. N. (2019) 'Effect of low temperature RF plasma treatment on electrical properties of junctionless InGaAs MOSFETs', ECS Journal of Solid State Science and Technology, 8(2), pp. Q24-Q31. doi: 10.1149/2.0181902jssen
dc.identifier.doi10.1149/2.0181902jssen
dc.identifier.eissn2162-8777
dc.identifier.endpage31en
dc.identifier.issn2162-8769
dc.identifier.issued2en
dc.identifier.journaltitleECS Journal of Solid State Science and Technologyen
dc.identifier.startpage24en
dc.identifier.urihttps://hdl.handle.net/10468/10204
dc.identifier.volume8en
dc.language.isoenen
dc.publisherIOP Publishingen
dc.relation.projectinfo:eu-repo/grantAgreement/EC/H2020::RIA/654384/EU/Access to European Nanoelectronics Network/ASCENTen
dc.relation.projectinfo:eu-repo/grantAgreement/SFI/SFI Investigator Programme/15/IA/3131/IE/Investigating Emerging 2D Semiconductor Technology/en
dc.rights© 2019, The Electrochemical Society. Published by IOP Publishing. This is an author-created, un-copyedited version of an article accepted for publication in ECS Journal of Solid State Science and Technology. The publisher is not responsible for any errors or omissions in this version of the manuscript or any version derived from it. The Version of Record is available online at 10.1149/2.0181902jss.en
dc.rights.urihttps://creativecommons.org/licenses/by-nc-nd/3.0/en
dc.subjectJunctionless MOSFETsen
dc.subjectLow-temperature RF plasma treatmenten
dc.subjectNon-thermal factorsen
dc.titleEffect of low temperature RF plasma treatment on electrical properties of junctionless InGaAs MOSFETsen
dc.typeArticle (peer-reviewed)en
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