Calculation of the capacitance-voltage characteristic of GaAs, In0.53Ga0.47As, and InAs metal-oxide-semiconductor structures

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dc.contributor.authorO'Regan, Terrance P.
dc.contributor.authorHurley, Paul K.
dc.contributor.funderScience Foundation Ireland
dc.contributor.funderArmy Research Laboratory
dc.date.accessioned2017-07-28T10:48:31Z
dc.date.available2017-07-28T10:48:31Z
dc.date.issued2011
dc.description.abstractThe capacitance-voltage characteristic of GaAs, In0.53Ga0.47As, and InAs metal-oxide-semiconductor capacitors (MOSCAPs) is calculated in three cases. First, quantization is not considered, then quantization of the C-valley is included, and finally quantization of the Gamma-, X-, and L-valleys is included. The choice of valley energy-minima is shown to determine the onset of occupation of the satellite valleys and corresponding increase in total capacitance. An equivalent-oxide-thickness correction is defined and used as a figure-of-merit to compare III-V to Si MOSCAPs and as a metric for the density-of-states bottleneck. (C) 2011 American Institute of Physics. (doi:10.1063/1.3652699)en
dc.description.sponsorshipScience Foundation Ireland (U.S.-Ireland Research Project (08/US/I1546)en
dc.description.statusPeer revieweden
dc.description.versionPublished Versionen
dc.format.mimetypeapplication/pdfen
dc.identifier.articleid163502
dc.identifier.citationO’Regan, T. P. and Hurley, P. K. (2011) 'Calculation of the capacitance-voltage characteristic of GaAs, In0.53Ga0.47As, and InAs metal-oxide-semiconductor structures', Applied Physics Letters, 99(16), pp. 163502. doi: 10.1063/1.3652699en
dc.identifier.doi10.1063/1.3652699
dc.identifier.endpage3
dc.identifier.issn0003-6951
dc.identifier.issn1077-3118
dc.identifier.issued16
dc.identifier.journaltitleApplied Physics Lettersen
dc.identifier.startpage1
dc.identifier.urihttps://hdl.handle.net/10468/4313
dc.identifier.volume99
dc.language.isoenen
dc.publisherAIP Publishingen
dc.relation.urihttp://aip.scitation.org/doi/abs/10.1063/1.3652699
dc.rights© 2011 American Institute of Physics.This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. The following article appeared in O’Regan, T. P. and Hurley, P. K. (2011) 'Calculation of the capacitance-voltage characteristic of GaAs, In0.53Ga0.47As, and InAs metal-oxide-semiconductor structures', Applied Physics Letters, 99(16), pp. 163502 and may be found at http://aip.scitation.org/doi/abs/10.1063/1.3652699en
dc.subjectTransporten
dc.subjectSiliconen
dc.subjectMosfetsen
dc.subjectIII-V semiconductorsen
dc.subjectCapacitanceen
dc.subjectMetal insulator semiconductor structuresen
dc.subjectInterfacial propertiesen
dc.subjectDielectricsen
dc.titleCalculation of the capacitance-voltage characteristic of GaAs, In0.53Ga0.47As, and InAs metal-oxide-semiconductor structuresen
dc.typeArticle (peer-reviewed)en
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