Highly mismatched III–V semiconductor alloys applied in multiple quantum well photovoltaics

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dc.contributor.authorXiong, Wanshu
dc.contributor.authorBroderick, Christopher A.
dc.contributor.authorRorison, Judy M.
dc.date.accessioned2018-03-12T11:56:32Z
dc.date.available2018-03-12T11:56:32Z
dc.date.issued2018-01-15
dc.description.abstractAdding dilute concentrations of nitrogen (N) or bismuth (Bi) into conventional III-V semiconductor alloys causes a large bowing of the bandgap energy due to the modification of the electronic band structure. This behaviour has attracted significant interest due to the resulting optical and electronic properties. Firstly, the authors present theoretical band structure models for GaAs-based dilute nitride, dilute bismide and dilute bismide-nitride alloys and then use them within current continuity equations to show the photovoltaic behaviour. To describe the band structures of these highly mismatched III-V semiconductor alloys, the authors introduce a 10-, 12and 14-band k · p Hamiltonian for dilute nitride, dilute bismide and dilute bismide-nitride semiconductors, respectively. The authors then use this approach to analyse GaBiAs multi-quantum well p-i-n structures for photovoltaic performance. Through theoretical analysis the authors can: (i) elucidate important trends in the properties and photovoltaic performance of GaBiAs QW structures and (ii) comment generally on the suitability of GaBiAs alloys and heterostructures for applications in multi-junction solar cells. In particular, the authors identify and quantify the limitations associated with current GaBiAs solar cells, and describe the improvements in performance that can be expected pending further development of this emerging class of devices.en
dc.description.statusPeer revieweden
dc.description.versionAccepted Versionen
dc.format.mimetypeapplication/pdfen
dc.identifier.citationXiong, W., Broderick, C. A. and Rorison, J. M. (2018) ‘Highly mismatched III–V semiconductor alloys applied in multiple quantum well photovoltaics’, IET Optoelectronics, 12(1), pp. 15-19. doi: 10.1049/iet-opt.2017.0091en
dc.identifier.endpage19en
dc.identifier.issn1751-8776
dc.identifier.issued1en
dc.identifier.journaltitleIET Optoelectronicsen
dc.identifier.startpage15en
dc.identifier.urihttps://hdl.handle.net/10468/5619
dc.identifier.volume12en
dc.language.isoenen
dc.publisherInstitution of Engineering and Technologyen
dc.relation.ispartofSemiconductor and Integrated Optoelectronics (SIOE) 2017
dc.rights© 2017, Institution of Engineering and Technology. All rights reserved.en
dc.subjectArsenic alloysen
dc.subjectBismuth alloysen
dc.subjectEnergy gapen
dc.subjectGallium alloysen
dc.subjectGallium arsenideen
dc.subjectIII-V semiconductorsen
dc.subjectIntegrated opticsen
dc.subjectIntegrated optoelectronicsen
dc.subjectPhotovoltaic cellsen
dc.subjectp-i-n photodiodesen
dc.subjectQuantum well devicesen
dc.subjectSemiconductor quantum wellsen
dc.subjectSolar cellsen
dc.titleHighly mismatched III–V semiconductor alloys applied in multiple quantum well photovoltaicsen
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