Wafer-scale very large memory windows in graphene monolayer/HfZrO ferroelectric capacitors

Simple item page
dc.check.date2019-08-17
dc.check.infoAccess to this article is restricted until 12 months after publication by request of the publisher.en
dc.contributor.authorDragoman, Mircea
dc.contributor.authorModreanu, Mircea
dc.contributor.authorPovey, Ian M.
dc.contributor.authorDinescu, Adrian
dc.contributor.authorDragoman, Daniela
dc.contributor.authorDi Donato, Andreea
dc.contributor.authorPavoni, Eleonora
dc.contributor.authorFarina, Marco
dc.contributor.funderMinisterul Educatiei Nationaleen
dc.date.accessioned2018-09-07T11:04:25Z
dc.date.available2018-09-07T11:04:25Z
dc.date.issued2018-08-17
dc.date.updated2018-09-03T08:58:45Z
dc.description.abstractWe have fabricated and electrically characterized at the wafer scale tens of metal-ferroelectric (HfZrO)-semiconductor capacitors and metal-graphene monolayer-ferroelectric (HfZrO)-semiconductor capacitors with the same top electrode dimensions. We have found that the memory windows of the capacitors containing graphene are 3-4 times larger than the ferroelectric capacitors without graphene, and increase even more after annealing. This physical effect can be attributed to the additional electric field exerted by the graphene monolayer on the HfZrO ferroelectric semiconductor capacitor, and to the negative thermal extension coefficient of graphene, respectively.en
dc.description.sponsorshipMinisterul Educatiei Nationale (PN-III-P4-ID-PCCF-2016-0033)en
dc.description.statusPeer revieweden
dc.description.versionAccepted Versionen
dc.format.mimetypeapplication/pdfen
dc.identifier.citationDragoman, M., Modreanu, M., Povey, I. M., Dinescu, A., Dragoman, D., Di Donato, A., Pavoni, E. and Farina, M. (2018) 'Wafer-scale very large memory windows in graphene monolayer/HfZrO ferroelectric capacitors', Nanotechnology, 29(42), 425204 (6pp). doi:10.1088/1361-6528/aad75een
dc.identifier.doi10.1088/1361-6528/aad75e
dc.identifier.issn0957-4484
dc.identifier.issued42en
dc.identifier.journaltitleNanotechnologyen
dc.identifier.urihttps://hdl.handle.net/10468/6731
dc.identifier.volume29en
dc.language.isoenen
dc.publisherIOP Publishingen
dc.rights© 2018, IOP Publishing. All rights reserved. Reproduced by permission of the publisher. This is an author-created, un-copyedited version of an article published in Nanotechnology. IOP Publishing Ltd is not responsible for any errors or omissions in this version of the manuscript or any version derived from it. The Version of Record is available online at 10.1088/1361-6528/aad75een
dc.subjectMoS2 transistorsen
dc.subjectThin-filmsen
dc.subjectSien
dc.titleWafer-scale very large memory windows in graphene monolayer/HfZrO ferroelectric capacitorsen
dc.typeArticle (peer-reviewed)en
Files
Original bundle
Now showing 1 - 1 of 1
Thumbnail Image
Name:
WAFER_SCALE_VERY_LARGE_MEMORY_WINDOWS_IN_GRAPHENE__HfZrO_FERROELECTRIC_CAPACITORS_Revision_Nano_IOP_2018.pdf
Size:
6.28 MB
Format:
Adobe Portable Document Format
Description:
Accepted Version
Download
License bundle
Now showing 1 - 1 of 1
Thumbnail Image
Name:
license.txt
Size:
2.71 KB
Format:
Item-specific license agreed upon to submission
Description:
Download
Collections
Tyndall National Institute - Journal Articles