Lattice dynamics of Ge1-xSnx alloy nanowires

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dc.contributor.authorRaha, Sreyan
dc.contributor.authorBiswas, Subhajit
dc.contributor.authorDoherty, Jessica
dc.contributor.authorMondal, Prasanna Kumar
dc.contributor.authorHolmes, Justin D.
dc.contributor.authorSingha, Achintya
dc.contributor.funderScience Foundation Irelanden
dc.contributor.funderScience and Engineering Research Boarden
dc.date.accessioned2022-11-16T15:34:55Z
dc.date.available2022-11-16T15:34:55Z
dc.date.issued2022-04-07
dc.date.updated2022-11-10T16:38:53Z
dc.description.abstractAlloying group IV semiconductors offers an effective way to engineer their electronic properties and lattice dynamics. The incorporation of Sn in Ge permits a transition from an indirect to a direct bandgap semiconductor. Here, by combining polarization, laser power-dependent and temperature-dependent micro-Raman spectroscopy we explore the full lattice dynamics of Ge1−xSnx (x = 0.01, 0.06 and 0.08) alloy nanowires. In the high Sn content samples (x ≥ 0.06), a low-frequency tail and a high-frequency shoulder are observed which are associated with the F2g optical phonon mode of Ge (Ge–Ge mode). The new modes are assigned to the stretching of Ge–Ge bonds due to Sn-induced lattice relaxation and compression, respectively. The symmetry of the observed Raman modes has been studied by polarization-dependent Raman scattering. Nonlinear fitting of the laser power-dependent intensity of the high-frequency Ge–Ge mode in the Ge1−xSnx alloy nanowires with x = 0.06 and 0.08 suggests the activation of a third-order stimulated Raman scattering process, due to the high intensity localized electric field surrounding the Sn clusters. Finally, from the temperature-dependent Raman study, we have estimated the isobaric Grüneisen parameters for all the observed modes.en
dc.description.sponsorshipScience and Engineering Research Board (EMR/2017/002107)en
dc.description.statusPeer revieweden
dc.description.versionAccepted Versionen
dc.format.mimetypeapplication/pdfen
dc.identifier.citationRaha, S., Biswas, S., Doherty, J., Mondal, P. K., Holmes, J. D. and Singha, A. (2022) 'Lattice dynamics of Ge1-xSnx alloy nanowires', Nanoscale, 14(19), pp. 7211-7219. doi: 10.1039/d2nr00743fen
dc.identifier.doi10.1039/d2nr00743fen
dc.identifier.eissn2040-3372
dc.identifier.endpage7219en
dc.identifier.issn2040-3364
dc.identifier.issued19en
dc.identifier.journaltitleNanoscaleen
dc.identifier.startpage7211en
dc.identifier.urihttps://hdl.handle.net/10468/13862
dc.identifier.volume14en
dc.language.isoenen
dc.publisherRoyal Society of Chemistryen
dc.relation.projectinfo:eu-repo/grantAgreement/SFI/SFI Investigator Programme/14/IA/2513/IE/Silicon Compatible, Direct Band-Gap Nanowire Materials For Beyond-CMOS Devices/en
dc.relation.urihttps://pubs.rsc.org/en/content/articlelanding/2022/nr/d2nr00743f
dc.rights© 2022, Royal Society of Chemistry.en
dc.subjectIsobaric Grüneisen parametersen
dc.subjectAlloyen
dc.subjectGroup IV semiconductorsen
dc.titleLattice dynamics of Ge1-xSnx alloy nanowiresen
dc.typeArticle (peer-reviewed)en
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