Band structure engineering of type-II GaSb/GaAs quantum rings for intermediate band solar cells

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dc.contributor.authorArkani, Reza
dc.contributor.authorBroderick, Christopher A.
dc.contributor.authorO'Reilly, Eoin P.
dc.contributor.funderHorizon 2020en
dc.contributor.funderScience Foundation Irelanden
dc.contributor.funderNational University of Irelanden
dc.date.accessioned2019-09-18T14:48:03Z
dc.date.available2019-09-18T14:48:03Z
dc.date.issued2019-07
dc.date.updated2019-09-18T14:37:16Z
dc.description.abstractType-II quantum-confined heterostructures constitute a promising approach to realise highly efficient intermediate band solar cells (IBSCs), due to their long radiative lifetimes and the flexibility with which their electronic and optical properties can be engineered. To quantify the potential of type-II GaSb/GaAs quantum rings (QRs) for IBSC applications we undertake a theoretical investigation of their electronic properties. In these heterostructures the intermediate band is formed by bound hole states which are strongly localised within the QR. We demonstrate that the unconventional QR geometry provides a flexible platform to engineer the valence band structure, enabling optimum energy gaps – which maximise overall IBSC efficiency – to be obtained via structural optimisation. Our results emphasise that utilising QRs for IBSC applications requires careful control of QR morphology in epitaxial growth.en
dc.description.sponsorshipNational University of Ireland (NUI; via Post-Doctoral Fellowship)en
dc.description.statusPeer revieweden
dc.description.versionAccepted Versionen
dc.format.mimetypeapplication/pdfen
dc.identifier.citationArkani, R., Broderick, C. A. and O’Reilly, E. P. (2019) 'Band structure engineering of type-II GaSb/GaAs quantum rings for intermediate band solar cells', 2019 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD), Ottawa, ON, Canada, 8-12 July 2019, pp. 53-54. doi: 10.1109/NUSOD.2019.8807051en
dc.identifier.doi10.1109/NUSOD.2019.8807051en
dc.identifier.eissn2158-3242
dc.identifier.endpage54en
dc.identifier.isbn978-1-7281-1647-1
dc.identifier.isbn978-1-7281-1646-4
dc.identifier.issn2158-3234
dc.identifier.startpage53en
dc.identifier.urihttps://hdl.handle.net/10468/8565
dc.language.isoenen
dc.publisherInstitute of Electrical and Electronics Engineers (IEEE)en
dc.relation.projectinfo:eu-repo/grantAgreement/EC/H2020::MSCA-ITN-ETN/641899/EU/Postgraduate Research on Dilute Metamorphic Nanostructures and Metamaterials in Semiconductor Photonics/PROMISen
dc.relation.projectinfo:eu-repo/grantAgreement/SFI/SFI Investigator Programme/15/IA/3082/IE/Multiscale Simulation and Analysis of emerging Group IV and III-V Semiconductor Materials and Devices/en
dc.relation.urihttps://ieeexplore.ieee.org/abstract/document/8807051
dc.rights© 2019 IEEE. . Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works.en
dc.subjectMorphologyen
dc.subjectStrainen
dc.subjectPhotovoltaic cellsen
dc.subjectAbsorptionen
dc.subjectStationary stateen
dc.subjectOptimizationen
dc.subjectPhotonic band gapen
dc.titleBand structure engineering of type-II GaSb/GaAs quantum rings for intermediate band solar cellsen
dc.typeConference itemen
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