Computational design of metamorphic In(N)AsSb mid-infrared light-emitting diodes

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dc.contributor.authorArkani, Reza
dc.contributor.authorBroderick, Christopher A.
dc.contributor.authorO'Reilly, Eoin P.
dc.contributor.funderHorizon 2020en
dc.contributor.funderScience Foundation Irelanden
dc.contributor.funderNational University of Irelanden
dc.date.accessioned2019-03-15T11:20:52Z
dc.date.available2019-03-15T11:20:52Z
dc.date.issued2018-07
dc.date.updated2019-03-15T11:07:26Z
dc.description.abstractWe present a theoretical investigation of the optical properties of metamorphic InN\pmby(As 1-x Sb x ) 1-y /Al z In 1-z As type-I quantum wells (QWs) designed to emit at mid-infrared wavelengths. The use of Al z In 1-z As metamorphic buffer layers has recently been demonstrated to enable growth of lattice-mismatched In As 1-x Sb x QWs having emission wavelengths 3 μm on GaAs substrates. However, little information is available regarding the properties of this newly established platform. We undertake a theoretical analysis and optimisation of the properties and performance of strain-balanced structures designed to emit at 3.3 and 4.2 μm, where we recommend the incorporation of dilute concentrations of nitrogen (N) to achieve emission beyond 4 μm. We quantify the calculated trends in the optical properties, as well as the ability to engineer and optimise the overall QW performance. Our results highlight the potential of metamorphic InN y (As 1-x Sb x ) 1-y /Al z In 1-z As QWs for the development of mid-infrared light-emitting diodes, and provide guidelines for the growth of optimised structures.en
dc.description.sponsorshipNational University of Ireland (Post-Doctoral Fellowship in the Sciences)en
dc.description.statusPeer revieweden
dc.description.urihttp://ieeenano18.org/en
dc.description.versionAccepted Versionen
dc.format.mimetypeapplication/pdfen
dc.identifier.citationArkani, R., Broderick, C. A. and O'Reilly, E. P. (2018) 'Computational design of metamorphic In(N)AsSb mid-infrared light-emitting diodes', 2018 IEEE 18th International Conference on Nanotechnology (IEEE-NANO), Cork, Ireland, 23-26 July. doi:10.1109/NANO.2018.8626250en
dc.identifier.doi10.1109/NANO.2018.8626250
dc.identifier.endpage4en
dc.identifier.isbn978-1-5386-5336-4
dc.identifier.isbn978-1-5386-5337-1
dc.identifier.issn1944-9380
dc.identifier.issn1944-9399
dc.identifier.startpage1en
dc.identifier.urihttps://hdl.handle.net/10468/7632
dc.language.isoenen
dc.publisherInstitute of Electrical and Electronics Engineers (IEEE)en
dc.relation.ispartof2018 IEEE 18th International Conference on Nanotechnology (IEEE-NANO)
dc.relation.projectinfo:eu-repo/grantAgreement/EC/H2020::MSCA-ITN-ETN/641899/EU/Postgraduate Research on Dilute Metamorphic Nanostructures and Metamaterials in Semiconductor Photonics/PROMISen
dc.relation.projectinfo:eu-repo/grantAgreement/SFI/SFI Investigator Programme/15/IA/3082/IE/Multiscale Simulation and Analysis of emerging Group IV and III-V Semiconductor Materials and Devices/en
dc.relation.urihttps://ieeexplore.ieee.org/document/8626250
dc.rights© 2018, European Union. Published by IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works.en
dc.subjectAluminium compoundsen
dc.subjectBuffer layersen
dc.subjectGallium arsenideen
dc.subjectGallium compoundsen
dc.subjectIII-V semiconductorsen
dc.subjectIndium compoundsen
dc.subjectOptical design techniquesen
dc.subjectSemiconductor growthen
dc.subjectSemiconductor quantum wellsen
dc.subjectStrain-balanced structuresen
dc.subjectOptimisationen
dc.subjectTheoretical analysisen
dc.subjectNewly established platformen
dc.subjectGaAs substratesen
dc.subjectx QWsen
dc.subjectLattice-mismatcheden
dc.subjectMetamorphic buffer layersen
dc.subjectMid-infrared wavelengthsen
dc.subjectType-I quantum wellsen
dc.subjectMetamorphic InNen
dc.subjectpmbyen
dc.subjectOptical propertiesen
dc.subjectTheoretical investigationen
dc.subjectMid-infrared light-emitting diodesen
dc.subjectComputational designen
dc.subjectSize 3.0 mumen
dc.subjectSize 4.0 mumen
dc.subjectSize 3.3 mumen
dc.subjectSize 4.2 mumen
dc.subjectAlzIn1-zen
dc.subjectInNyen
dc.subjectStrainen
dc.subjectMetalsen
dc.subjectPhotonic band gapen
dc.subjectLight emitting diodesen
dc.subjectOptical superlatticesen
dc.subjectLatticesen
dc.subjectStimulated emissionen
dc.subjectEmission wavelengths 3 µmen
dc.titleComputational design of metamorphic In(N)AsSb mid-infrared light-emitting diodesen
dc.typeConference itemen
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