Comparison of InGaAs and InAlAs sacrificial layers for release of InP-based devices

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dc.contributor.authorO'Callaghan, James
dc.contributor.authorLoi, Ruggero
dc.contributor.authorMura, Enrica E.
dc.contributor.authorRoycroft, Brendan
dc.contributor.authorTrindade, António José
dc.contributor.authorThomas, Kevin K.
dc.contributor.authorGocalińska, Agnieszka M.
dc.contributor.authorPelucchi, Emanuele
dc.contributor.authorZhang, J.
dc.contributor.authorRoelkens, G.
dc.contributor.authorBower, Christopher A.
dc.contributor.authorCorbett, Brian M.
dc.contributor.funderScience Foundation Irelanden
dc.contributor.funderHorizon 2020en
dc.date.accessioned2017-11-30T12:38:23Z
dc.date.available2017-11-30T12:38:23Z
dc.date.issued2017-12-01
dc.date.updated2017-11-29T10:04:56Z
dc.description.abstractHeterogeneous integration of InP devices to Si substrates by adhesive-less micro transfer printing requires flat surfaces for optimum attachment and thermal sinking. InGaAs and InAlAs sacrificial layers are compared for the selective undercut of InP coupons by FeCl3:H2O (1:2). InAlAs offers isotropic etches and superior selectivity (> 4,000) to InP when compared with InGaAs. A 500 nm thick InAlAs sacrificial layer allows the release of wide coupons with a surface roughness < 2 nm and a flatness < 20 nm. The InAlAs release technology is applied to the transfer printing of a pre-fabricated InP laser to a Si substrate.en
dc.description.sponsorshipScience Foundation Ireland (15/IA/2864); Horizon 2020 (Research and Innovation Programme 45314 (TOP-HIT))en
dc.description.statusPeer revieweden
dc.description.versionPublished Versionen
dc.format.mimetypeapplication/pdfen
dc.identifier.citationO'Callaghan, J., Loi, R., Mura, E. E., Roycroft, B., Trindade, A. J., Thomas, K., Gocalinska, A., Pelucchi, E., Zhang, J.; Roelkens, G.; Bower, C. A. and Corbett, B. (2017) 'Comparison of InGaAs and InAlAs sacrificial layers for release of InP-based devices', Optical Materials Express, 7(12), pp.4408-4414. doi:10.1364/OME.7.004408en
dc.identifier.doi10.1364/OME.7.004408
dc.identifier.endpage4414en
dc.identifier.issn2159-3930
dc.identifier.issued12en
dc.identifier.journaltitleOptical Materials Expressen
dc.identifier.startpage4408en
dc.identifier.urihttps://hdl.handle.net/10468/5110
dc.identifier.volume7en
dc.language.isoenen
dc.publisherOptical Society of Americaen
dc.relation.projectinfo:eu-repo/grantAgreement/SFI/SFI Research Centres/12/RC/2276/IE/I-PIC Irish Photonic Integration Research Centre/en
dc.rights© 2017, Optical Society of America under the terms of the OSA Open Access Publishing Agreement. Users may use, reuse, and build upon the article, or use the article for text or data mining, so long as such uses are for non-commercial purposes and appropriate attribution is maintained. All other rights are reserved.en
dc.subjectIntegrated optics materialsen
dc.subjectSubsystem integration and techniquesen
dc.titleComparison of InGaAs and InAlAs sacrificial layers for release of InP-based devicesen
dc.typeArticle (peer-reviewed)en
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