Comparison of InGaAs and InAlAs sacrificial layers for release of InP-based devices

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O'Callaghan, James
Loi, Ruggero
Mura, Enrica E.
Roycroft, Brendan
Trindade, António José
Thomas, Kevin K.
Gocalińska, Agnieszka M.
Pelucchi, Emanuele
Zhang, J.
Roelkens, G.
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Heterogeneous integration of InP devices to Si substrates by adhesive-less micro transfer printing requires flat surfaces for optimum attachment and thermal sinking. InGaAs and InAlAs sacrificial layers are compared for the selective undercut of InP coupons by FeCl3:H2O (1:2). InAlAs offers isotropic etches and superior selectivity (> 4,000) to InP when compared with InGaAs. A 500 nm thick InAlAs sacrificial layer allows the release of wide coupons with a surface roughness < 2 nm and a flatness < 20 nm. The InAlAs release technology is applied to the transfer printing of a pre-fabricated InP laser to a Si substrate.
Integrated optics materials , Subsystem integration and techniques
O'Callaghan, J., Loi, R., Mura, E. E., Roycroft, B., Trindade, A. J., Thomas, K., Gocalinska, A., Pelucchi, E., Zhang, J.; Roelkens, G.; Bower, C. A. and Corbett, B. (2017) 'Comparison of InGaAs and InAlAs sacrificial layers for release of InP-based devices', Optical Materials Express, 7(12), pp.4408-4414. doi:10.1364/OME.7.004408
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