Heterogeneously grown tunable group-IV laser on silicon

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dc.contributor.authorHudait, Mantu
dc.contributor.authorClavel, M. B.
dc.contributor.authorLester, L.
dc.contributor.authorSaladukha, Dzianis
dc.contributor.authorOchalski, Tomasz J.
dc.contributor.authorMurphy-Armando, Felipe
dc.contributor.editorRazeghi, Manijeh
dc.contributor.funderNational Science Foundation, United States
dc.date.accessioned2016-10-05T13:06:08Z
dc.date.available2016-10-05T13:06:08Z
dc.date.issued2016-02
dc.date.updated2016-10-05T12:23:13Z
dc.description.abstractTunable tensile-strained germanium (epsilon-Ge) thin films on GaAs and heterogeneously integrated on silicon (Si) have been demonstrated using graded III-V buffer architectures grown by molecular beam epitaxy (MBE). epsilon-Ge epilayers with tunable strain from 0% to 1.95% on GaAs and 0% to 1.11% on Si were realized utilizing MBE. The detailed structural, morphological, band alignment and optical properties of these highly tensile-strained Ge materials were characterized to establish a pathway for wavelength-tunable laser emission from 1.55 μm to 2.1 μm. High-resolution X-ray analysis confirmed pseudomorphic epsilon-Ge epitaxy in which the amount of strain varied linearly as a function of indium alloy composition in the InxGa1-xAs buffer. Cross-sectional transmission electron microscopic analysis demonstrated a sharp heterointerface between the epsilon-Ge and the InxGa1-xAs layer and confirmed the strain state of the epsilon-Ge epilayer. Lowtemperature micro-photoluminescence measurements confirmed both direct and indirect bandgap radiative recombination between the Γ and L valleys of Ge to the light-hole valence band, with L-lh bandgaps of 0.68 eV and 0.65 eV demonstrated for the 0.82% and 1.11% epsilon-Ge on Si, respectively. The highly epsilon-Ge exhibited a direct bandgap, and wavelength-tunable emission was observed for all samples on both GaAs and Si. Successful heterogeneous integration of tunable epsilon-Ge quantum wells on Si paves the way for the implementation of monolithic heterogeneous devices on Si.en
dc.description.sponsorshipNational Science Foundation, United States (ECCS-1348653, ECCS-150795)
dc.description.statusPeer revieweden
dc.description.versionPublished Versionen
dc.format.mimetypeapplication/pdfen
dc.identifier.citationHUDAIT, M., CLAVEL, M., LESTER, L., SALADUKHA, D., OCHALSKI, T. & MURPHY-ARMANDO, F. 2016. Heterogeneously grown tunable group-IV laser on silicon. In: Razeghi, Manijeh eds. Proc. SPIE 9755, Quantum Sensing and Nano Electronics and Photonics XIII 13 February. San Francisco, California: SPIE doi:10.1117/12.2218364en
dc.identifier.doi10.1117/12.2218364
dc.identifier.urihttps://hdl.handle.net/10468/3157
dc.language.isoenen
dc.publisherSociety of Photo-Optical Instrumentation Engineers (SPIE)en
dc.relation.ispartofProc. SPIE 9755, Quantum Sensing and Nano Electronics and Photonics XIII
dc.relation.urihttp://dx.doi.org/10.1117/12.2218364
dc.rightsCopyright 2016. Society of Photo Optical Instrumentation Engineers (SPIE). One print or electronic copy may be made for personal use only. Systematic reproduction and distribution, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper are prohibited.en
dc.subjectLasersen
dc.subjectSiliconen
dc.subjectMolecular beam epitaxyen
dc.subjectGallium arsenideen
dc.subjectWavelength tuningen
dc.subjectX-raysen
dc.subjectThin filmsen
dc.subjectGermaniumen
dc.subjectIndiumen
dc.subjectElectronsen
dc.subjectTensile strainen
dc.subjectHeterogeneousen
dc.subjectMBEen
dc.subjectInGaAsen
dc.titleHeterogeneously grown tunable group-IV laser on siliconen
dc.typeConference itemen
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