Extended InGaAs photodiode integrated on SOI waveguide circuit for 2 µm waveband
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Accepted Version
Date
2024-06-10
Authors
Arafat, Yeasir
Justice, John
Gocalińska, Agnieszka
Atar, Fatih
Russel, Eoin
Roycroft, Brendan
O’Faolain, Liam
Pelucchi, Emanuele
Gunning, Fatima
Corbett, Brian
Journal Title
Journal ISSN
Volume Title
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Published Version
Abstract
We demonstrate micro transfer printing of 2 µm bandgap photodiodes onto an SOI circuit. The integrated photodiode has a dark current below 15 nA and responsivity-0.45 A/W at a reverse bias voltage of 2 V.
Description
Keywords
Photonics , Photodetector , Silicon photonics , Integrated photonics , Transfer-printing
Citation
Arafat, Y., Justice, J., Gocalińska, A., Atar, F., Russel, E., Roycroft, B., O’Faolain, L., Pelucchi, E., Gunning, F. and Corbett, B. (2024) 'Extended InGaAs photodiode integrated on SOI waveguide circuit for 2 µm waveband', 2024 IEEE Silicon Photonics Conference (SiPhotonics), Tokyo Bay, Japan, 15-18 April, pp. 1-2. https://doi.org/10.1109/SiPhotonics60897.2024.10543485
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