In situ H(2)S passivation of In(0.53)Ga(0.47)As/InP metal-oxide-semiconductor capacitors with atomic-layer deposited HfO(2) gate dielectric

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dc.contributor.authorO'Connor, Éamon
dc.contributor.authorLong, Rathnait D.
dc.contributor.authorCherkaoui, Karim
dc.contributor.authorThomas, Kevin K.
dc.contributor.authorChalvet, Francis N.
dc.contributor.authorPovey, Ian M.
dc.contributor.authorPemble, Martyn E.
dc.contributor.authorHurley, Paul K.
dc.contributor.authorBrennan, B.
dc.contributor.authorHughes, Gregory
dc.contributor.authorNewcomb, Simon B.
dc.contributor.funderScience Foundation Ireland
dc.contributor.funderIrish Research Council for Science, Engineering and Technology
dc.contributor.funderIntel Corporation
dc.date.accessioned2017-07-28T11:47:33Z
dc.date.available2017-07-28T11:47:33Z
dc.date.issued2008
dc.description.abstractWe have studied an in situ passivation of In(0.53)Ga(0.47)As, based on H(2)S exposure (50-350 degrees C) following metal organic vapor phase epitaxy growth, prior to atomic layer deposition of HfO(2) using Hf[N(CH(3))(2)](4) and H(2)O precursors. X-ray photoelectron spectroscopy revealed the suppression of As oxide formation in air exposed InGaAs surfaces for all H(2)S exposure temperatures. Transmission electron microscopy analysis demonstrates a reduction of the interface oxide between the In(0.53)Ga(0.47)As epitaxial layer and the amorphous HfO(2) resulting from the in situ H(2)S passivation. The capacitance-voltage and current-voltage behavior of Pd/HfO(2)/In(0.53)Ga(0.47)As/InP structures demonstrates that the electrical characteristics of samples exposed to 50 degrees C H(2)S at the end of the metal-organic vapor-phase epitaxy In(0.53)Ga(0.47)As growth are comparable to those obtained using an ex situ aqueous (NH(4))(2)S passivation. (c) 2008 American Institute of Physics. (DOI: 10.1063/1.2829586)en
dc.description.sponsorshipScience Foundation Ireland (05/IN/1751); Irish Research Council for Science, Engineering, and Technology; Intel Corporation (Intel Ireland)en
dc.description.statusPeer revieweden
dc.description.versionPublished Versionen
dc.format.mimetypeapplication/pdfen
dc.identifier.articleid22902
dc.identifier.citationO’Connor, E., Long, R. D., Cherkaoui, K., Thomas, K. K., Chalvet, F., Povey, I. M., Pemble, M. E., Hurley, P. K., Brennan, B., Hughes, G. and Newcomb, S. B. (2008) 'In situ H2S passivation of In0.53Ga0.47As∕InP metal-oxide-semiconductor capacitors with atomic-layer deposited HfO2 gate dielectric', Applied Physics Letters, 92(2), pp. 022902. doi: 10.1063/1.2829586en
dc.identifier.doi10.1063/1.2829586
dc.identifier.endpage3
dc.identifier.issn0003-6951
dc.identifier.issn1077-3118
dc.identifier.issued2
dc.identifier.journaltitleApplied Physics Lettersen
dc.identifier.startpage1
dc.identifier.urihttps://hdl.handle.net/10468/4373
dc.identifier.volume92
dc.language.isoenen
dc.publisherAIP Publishingen
dc.relation.urihttp://aip.scitation.org/doi/abs/10.1063/1.2829586
dc.rights© 2008 American Institute of Physics.This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. The following article appeared in O’Connor, E., Long, R. D., Cherkaoui, K., Thomas, K. K., Chalvet, F., Povey, I. M., Pemble, M. E., Hurley, P. K., Brennan, B., Hughes, G. and Newcomb, S. B. (2008) 'In situ H2S passivation of In0.53Ga0.47As∕InP metal-oxide-semiconductor capacitors with atomic-layer deposited HfO2 gate dielectric', Applied Physics Letters, 92(2), pp. 022902 and may be found at http://aip.scitation.org/doi/abs/10.1063/1.2829586en
dc.subjectGaasen
dc.subjectHydrogenen
dc.subjectSurfaceen
dc.subjectFilmsen
dc.subjectPassivationen
dc.subjectIII-V semiconductorsen
dc.subjectAtomic layer depositionen
dc.subjectSurface passivationen
dc.subjectX-ray photoelectron spectroscopyen
dc.titleIn situ H(2)S passivation of In(0.53)Ga(0.47)As/InP metal-oxide-semiconductor capacitors with atomic-layer deposited HfO(2) gate dielectricen
dc.typeArticle (peer-reviewed)en
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