Engineering the Palladium–WSe2 interface chemistry for field effect transistors with high-performance hole contacts

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dc.check.date2019-12-07
dc.check.infoAccess to this article is restricted until 12 months after publication by request of the publisher.en
dc.contributor.authorSmyth, Christopher M.
dc.contributor.authorWalsh, Lee A.
dc.contributor.authorBolshakov, Pavel
dc.contributor.authorCatalano, Massimo
dc.contributor.authorAddou, Rafik
dc.contributor.authorWang, Luhua
dc.contributor.authorKim, Jiyoung
dc.contributor.authorKim, Moon J.
dc.contributor.authorYoung, Chadwin D.
dc.contributor.authorHinkle, Christopher L.
dc.contributor.authorWallace, Robert M.
dc.contributor.funderScience Foundation Irelanden
dc.contributor.funderHorizon 2020en
dc.contributor.funderNational Science Foundationen
dc.contributor.funderSemiconductor Research Corporationen
dc.date.accessioned2019-01-10T12:36:36Z
dc.date.available2019-01-10T12:36:36Z
dc.date.issued2018-12-07
dc.description.abstractPalladium has been widely employed as a hole contact to WSe2 and has enabled, at times, the highest WSe2 transistor performance. However, there are orders of magnitude variation across the literature in Pd–WSe2 contact resistance and ION/IOFF ratios with no true understanding of how to consistently achieve high-performance contacts. In this work, WSe2 transistors with impressive ION/IOFF ratios of 106 and Pd–WSe2 Schottky diodes with near-zero variability are demonstrated utilizing Ohmic-like Pd contacts through deliberate control of the interface chemistry. The increased concentration of a PdSex intermetallic is correlated with an Ohmic band alignment and concomitant defect passivation, which further reduces the contact resistance, variability, and barrier height inhomogeneity. The lowest contact resistance occurs when a 60 min post-metallization anneal at 400 °C in forming gas (FG) is performed. X-ray photoelectron spectroscopy indicates this FG anneal produces 3× the concentration of PdSex and an Ohmic band alignment, in contrast to that detected after annealing in ultrahigh vacuum, during which a 0.2 eV hole Schottky barrier forms. Raman spectroscopy and scanning transmission electron microscopy highlight the necessity of the fabrication step to achieve high-performance contacts as no PdSex forms, and WSe2 is unperturbed by room temperature Pd deposition. However, at least one WSe2 layer is consumed by the necessary interface reactions that form PdSex requiring strategic exploitation of a sacrificial WSe2 layer during device fabrication. The interface chemistry and structural properties are correlated with Pd–WSe2 diode and transistor performance, and the recommended processing steps are provided to enable reliable high-performance contact formation.en
dc.description.sponsorshipNational Science Foundation (NSF Award 1407765 under the US/Ireland UNITE collaboration ); Semiconductor Research Corporation (NEWLIMITS Center and NIST - Award 70NANB17H041)en
dc.description.statusPeer revieweden
dc.description.versionAccepted Versionen
dc.format.mimetypeapplication/pdfen
dc.identifier.citationSmyth, C. M., Walsh, L. A., Bolshakov, P., Catalano, M., Addou, R., Wang, L., Kim, J., Kim, M. J., Young, C. D., Hinkle, C. L. and Wallace, R. M. (2018) ‘Engineering the Palladium–WSe2 interface chemistry for field effect transistors with high-performance hole contacts’, ACS Applied Nano Materials. doi: 10.1021/acsanm.8b01708en
dc.identifier.doi10.1021/acsanm.8b01708
dc.identifier.issn2574-0970
dc.identifier.journaltitleACS Applied Nano Materialsen
dc.identifier.urihttps://hdl.handle.net/10468/7282
dc.language.isoenen
dc.publisherAmerican Chemical Societyen
dc.relation.projectinfo:eu-repo/grantAgreement/SFI/SFI Research Centres/12/RC/2278/IE/Advanced Materials and BioEngineering Research Centre (AMBER)/en
dc.relation.projectinfo:eu-repo/grantAgreement/EC/H2020::MSCA-COFUND-FP/713567/EU/Cutting Edge Training - Cutting Edge Technology/EDGEen
dc.rights© 2018, American Chemical Society. This document is the Accepted Manuscript version of a Published Work that appeared in final form in ACS Applied Nano Materials after technical editing by the publisher. To access the final edited and published work see https://pubs.acs.org/doi/abs/10.1021/acsanm.8b01708en
dc.subjectAnnealingen
dc.subjectInterface chemistryen
dc.subjectMetal contacten
dc.subjectPalladiumen
dc.subjectTransistoren
dc.subjectWSe2en
dc.subjectX-ray photoelectron spectroscopyen
dc.titleEngineering the Palladium–WSe2 interface chemistry for field effect transistors with high-performance hole contactsen
dc.typeArticle (peer-reviewed)en
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