The role of oxide traps aligned with the semiconductor energy gap in MOS systems

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dc.contributor.authorCaruso, Enrico
dc.contributor.authorLin, Jun
dc.contributor.authorMonaghan, Scott
dc.contributor.authorCherkaoui, Karim
dc.contributor.authorGity, Farzan
dc.contributor.authorPalestri, Pierpaolo
dc.contributor.authorEsseni, David
dc.contributor.authorSelmi, Luca
dc.contributor.authorHurley, Paul K.
dc.contributor.funderHorizon 2020en
dc.contributor.funderScience Foundation Irelanden
dc.date.accessioned2020-11-09T10:20:40Z
dc.date.available2020-11-09T10:20:40Z
dc.date.issued2020-08-31
dc.date.updated2020-11-09T10:10:43Z
dc.description.abstractThis work demonstrates that when inelastic tunneling between oxide traps and semiconductor bands is considered, the traps with energy aligned to the semiconductor bandgap play a significant role in the frequency dispersion of the capacitance–voltage ( C–V ) and conductance–voltage ( G–V ) characteristics of metal–oxide–semiconductor (MOS) systems. The work also highlights that a nonlocal model for tunneling into interface states is mandatory to reproduce experiments when carrier quantization in the inversion layer is accounted for. A model, including these ingredients, is used to evaluate the energy and depth distribution of oxide traps in a n-In 0.53 Ga 0.47 As/Al 2 O 3 MOS system and is able to accurately fit the C–V frequency dispersion from depletion to weak inversion. The oxide trap distribution determined from the C–V response predicts the corresponding G–V dispersion with frequency.en
dc.description.sponsorshipScience Foundation Ireland (12/RC/2278_P2)en
dc.description.statusPeer revieweden
dc.description.versionAccepted Versionen
dc.format.mimetypeapplication/pdfen
dc.identifier.citationCaruso, E., Lin, J., Monaghan, S., Cherkaoui, K., Gity, F., Palestri, P., Esseni, D., Selmi, L. and Hurley, P. K. (2020) 'The role of oxide traps aligned with the semiconductor energy gap in MOS systems', IEEE Transactions on Electron Devices, 67(10), pp. 4372-4378. doi: 10.1109/TED.2020.3018095en
dc.identifier.doi10.1109/TED.2020.3018095en
dc.identifier.eissn1557-9646
dc.identifier.endpage4378en
dc.identifier.issn0018-9383
dc.identifier.issued10en
dc.identifier.journaltitleIEEE Transactions on Electron Devicesen
dc.identifier.startpage4372en
dc.identifier.urihttps://hdl.handle.net/10468/10741
dc.identifier.volume67en
dc.language.isoenen
dc.publisherInstitute of Electrical and Electronics Engineers (IEEE)en
dc.relation.projectinfo:eu-repo/grantAgreement/EC/H2020::RIA/871764/EU/Cryogenic 3D Nanoelectronics/SEQUENCEen
dc.relation.projectinfo:eu-repo/grantAgreement/EC/H2020::RIA/688784/EU/Integration of III-V Nanowire Semiconductors for next Generation High Performance CMOS SOC Technologies/INSIGHTen
dc.rights© 2020, IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works.en
dc.subjectAl2O3en
dc.subjectDefectsen
dc.subjectInGaAsen
dc.subjectInterface trapsen
dc.subjectMultifrequencyen
dc.subjectMultiphononen
dc.subjectNonradiative multiphonon (NMP)en
dc.subjectOxide trapsen
dc.subjectQuantizationen
dc.subjectQuantum effectsen
dc.subjectSpectroscopyen
dc.subjectTCADen
dc.subjectTunnelingen
dc.subjectCapacitance–voltage (C–V)en
dc.subjectConductance–voltage (G–V)en
dc.titleThe role of oxide traps aligned with the semiconductor energy gap in MOS systemsen
dc.typeArticle (peer-reviewed)en
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