High power surface emitting InGaN superluminescent light-emitting diodes

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dc.check.date2020-10-21
dc.check.infoAccess to this article is restricted until 12 months after publication by request of the publisher.en
dc.contributor.authorCahill, Rory
dc.contributor.authorMaaskant, Pleun P.
dc.contributor.authorAkhter, Mahbub
dc.contributor.authorCorbett, Brian
dc.contributor.funderEnterprise Irelanden
dc.contributor.funderEuropean Commissionen
dc.date.accessioned2019-11-07T12:52:52Z
dc.date.available2019-11-07T12:52:52Z
dc.date.issued2019-10-21
dc.date.updated2019-11-07T12:43:01Z
dc.description.abstractA high power InGaN superluminescent light-emitting diode emitting normal to the substrate is demonstrated. The device uses a structure in which a monolithically integrated turning mirror reflects the light at both ends of the in-plane waveguide to direct amplified spontaneous emission downward through the transparent GaN substrate. Record optical peak powers of >2 W (both outputs) are reported under pulsed operation at 1% duty cycle. A broad, smooth emission spectrum with a FWHM of 6 nm centered at 416 nm is measured at peak output and ascribed to very low feedback associated with the turning mirror and antireflection coating.en
dc.description.sponsorshipEuropean Commission (European Structural and Investment Funds 2014–2020 program)en
dc.description.statusPeer revieweden
dc.description.versionPublished Versionen
dc.format.mimetypeapplication/pdfen
dc.identifier.articleid171102en
dc.identifier.citationCahill, R., Maaskant, P. P., Akhter, M. and Corbett, B. (2019) 'High power surface emitting InGaN superluminescent light-emitting diodes', Applied Physics Letters, 115(17), 171102 (5pp). doi: 10.1063/1.5118953en
dc.identifier.doi10.1063/1.5118953en
dc.identifier.eissn1077-3118
dc.identifier.endpage5en
dc.identifier.issn0003-6951
dc.identifier.issued17en
dc.identifier.journaltitleApplied Physics Lettersen
dc.identifier.startpage1en
dc.identifier.urihttps://hdl.handle.net/10468/8974
dc.identifier.volume115en
dc.language.isoenen
dc.publisherAIP Publishingen
dc.relation.urihttps://aip.scitation.org/doi/10.1063/1.5118953
dc.rights© 2019, Author(s). This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. This article appeared in Cahill, R., Maaskant, P. P., Akhter, M. and Corbett, B. (2019) 'High power surface emitting InGaN superluminescent light-emitting diodes', Applied Physics Letters, 115(17), 171102 (5pp), doi: 10.1063/1.5118953, and may be found at https://doi.org/10.1063/1.5118953en
dc.subjectAntireflection coatingen
dc.subjectTurning mirroren
dc.subjectInGaN superluminescent light-emitting diodeen
dc.subjectTransparent GaN substrateen
dc.titleHigh power surface emitting InGaN superluminescent light-emitting diodesen
dc.typeArticle (peer-reviewed)en
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