Fermi level de-pinning of aluminium contacts to n-type germanium using thin atomic layer deposited layers

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dc.contributor.authorGajula, D. R.
dc.contributor.authorBaine, P.
dc.contributor.authorModreanu, Mircea
dc.contributor.authorHurley, Paul K.
dc.contributor.authorArmstrong, B. M.
dc.contributor.authorMcNeill, D. W.
dc.contributor.funderDepartment for Employment and Learning, Northern Ireland
dc.contributor.funderScience Foundation Ireland
dc.contributor.funderNational Science Foundation
dc.date.accessioned2017-07-25T14:16:24Z
dc.date.available2017-07-25T14:16:24Z
dc.date.issued2014
dc.description.abstractFermi-level pinning of aluminium on n-type germanium (n-Ge) was reduced by insertion of a thin interfacial dielectric by atomic layer deposition. The barrier height for aluminium contacts on n-Ge was reduced from 0.7 eV to a value of 0.28 eV for a thin Al2O3 interfacial layer (similar to 2.8 nm). For diodes with an Al2O3 interfacial layer, the contact resistance started to increase for layer thicknesses above 2.8 nm. For diodes with a HfO2 interfacial layer, the barrier height was also reduced but the contact resistance increased dramatically for layer thicknesses above 1.5 nm. (C) 2014 AIP Publishing LLC.en
dc.description.sponsorshipNational Science Foundation (US-Ireland R&D Partnership Program (USI 009)); Science Foundation Ireland (08/US/I1546)en
dc.description.statusPeer revieweden
dc.description.versionPublished Versionen
dc.format.mimetypeapplication/pdfen
dc.identifier.articleid12102
dc.identifier.citationGajula, D. R., Baine, P., Modreanu, M., Hurley, P. K., Armstrong, B. M. and McNeill, D. W. (2014) 'Fermi level de-pinning of aluminium contacts to n-type germanium using thin atomic layer deposited layers', Applied Physics Letters, 104(1), pp. 012102. doi: 10.1063/1.4858961en
dc.identifier.doi10.1063/1.4858961
dc.identifier.endpage4
dc.identifier.issn0003-6951
dc.identifier.issn1077-3118
dc.identifier.issued1
dc.identifier.journaltitleApplied Physics Lettersen
dc.identifier.startpage1
dc.identifier.urihttps://hdl.handle.net/10468/4265
dc.identifier.volume104
dc.language.isoenen
dc.publisherAIP Publishingen
dc.relation.urihttp://aip.scitation.org/doi/abs/10.1063/1.4858961
dc.rights© 2014 AIP Publishing LLC.This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. The following article appeared in Gajula, D. R., Baine, P., Modreanu, M., Hurley, P. K., Armstrong, B. M. and McNeill, D. W. (2014) 'Fermi level de-pinning of aluminium contacts to n-type germanium using thin atomic layer deposited layers', Applied Physics Letters, 104(1), pp. 012102 and may be found at http://aip.scitation.org/doi/abs/10.1063/1.4858961en
dc.subjectSchottky barriersen
dc.subjectOxidationen
dc.subjectGe(100)en
dc.subjectMosfetsen
dc.subjectGermaniumen
dc.subjectElemental semiconductorsen
dc.subjectAluminiumen
dc.subjectFermi levelsen
dc.subjectMetal to metal contactsen
dc.subjectSurfaces
dc.titleFermi level de-pinning of aluminium contacts to n-type germanium using thin atomic layer deposited layersen
dc.typeArticle (peer-reviewed)en
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