Soft breakdown in MgO dielectric layers

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dc.contributor.authorMiranda, Enrique
dc.contributor.authorO'Connor, Éamon
dc.contributor.authorHughes, Gregory
dc.contributor.authorCasey, P.
dc.contributor.authorCherkaoui, Karim
dc.contributor.authorMonaghan, Scott
dc.contributor.authorLong, Rathnait D.
dc.contributor.authorO'Connell, Dan
dc.contributor.authorHurley, Paul K.
dc.contributor.funderGeneralitat de Catalunyaen
dc.contributor.funderMinisterio de Ciencia y Tecnologíaen
dc.contributor.funderScience Foundation Irelanden
dc.date.accessioned2022-07-21T14:09:18Z
dc.date.available2022-07-21T14:09:18Z
dc.date.issued2009-07-24
dc.date.updated2022-07-19T21:20:29Z
dc.description.abstractIn this work, we report on the occurrence of the soft breakdown (SBD) failure mode in 20 nm-thick films of magnesium oxide (MgO) grown on Si substrates. To our knowledge, this is the first observation of this failure mechanism in a high-kappa gate dielectric with such a large oxide thickness. We show that the I-V characteristics follow the power-law dependence typical of SBD conduction in a wider voltage range than that reported for SiO 2 . We pay special attention to the relationship between the magnitude of the current and the normalized differential conductance, and analyze the role played by the injection polarity and substrate type.en
dc.description.sponsorshipGeneralitat de Catalunya (BE-2007); Ministerio de Ciencia y Tecnología (project number TEC2006–13 731-C02–01); Science Foundation Ireland (Walton Awards scheme 07/W.1/11828; 05/IN/1751; National Access Program at the Tyndall National Institute)en
dc.description.statusPeer revieweden
dc.description.versionAccepted Versionen
dc.format.mimetypeapplication/pdfen
dc.identifier.citationMiranda, E., O'Connor, E., Hughes, G., Casey, P., Cherkaoui, K., Monaghan, S., Long, R., O'Connell, D. and Hurley, P. K. (2009) 'Soft breakdown in MgO dielectric layers', 2009 IEEE International Reliability Physics Symposium, Montreal, QC, Canada, 26-30 April, pp. 688-691. doi: 10.1109/IRPS.2009.5173330en
dc.identifier.doi10.1109/IRPS.2009.5173330en
dc.identifier.eissn1938-1891
dc.identifier.endpage691en
dc.identifier.isbn978-1-4244-2888-5
dc.identifier.isbn978-1-4244-2889-2
dc.identifier.issn1541-7026
dc.identifier.startpage688en
dc.identifier.urihttps://hdl.handle.net/10468/13392
dc.language.isoenen
dc.publisherInstitute of Electrical and Electronics Engineers (IEEE)en
dc.relation.ispartof2009 IEEE International Reliability Physics Symposium, Montreal, QC, Canada, 26-30 April
dc.rights© 2009, IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works.en
dc.subjectBreakdownen
dc.subjectHigh-κen
dc.subjectMgOen
dc.titleSoft breakdown in MgO dielectric layersen
dc.typeConference itemen
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