Low-temperature conductance oscillations in junctionless nanowire transistors

Simple item page
dc.contributor.authorPark, Jong-Tae
dc.contributor.authorKim, Jin Young
dc.contributor.authorLee, Chi-Woo
dc.contributor.authorColinge, Jean-Pierre
dc.contributor.funderScience Foundation Ireland
dc.contributor.funderIncheon National University
dc.contributor.funderHigher Education Authority
dc.date.accessioned2017-07-28T11:04:41Z
dc.date.available2017-07-28T11:04:41Z
dc.date.issued2010
dc.description.abstractJunctionless nanowire transistors show more marked oscillations conductance oscillations than inversion-mode devices. These oscillations can be observed at higher temperature, drain voltage, and gate voltage than in surface-channel, inversion-mode multigate metal-oxide-semiconductor field-effect devices. Clear oscillations are observed at 77 K at a drain voltage of 100 mV in devices with a 10 x 10 nm(2) cross section. (C) 2010 American Institute of Physics. (doi:10.1063/1.3506899)en
dc.description.sponsorshipScience Foundation Ireland (Grant No. 05/IN/I888: Advanced Scalable Silicon-on-Insulator Devices for Beyond-End-of-Roadmap Semiconductors.); Higher Education Authority (Programme for Research in Third-Level Institutions); University of Incheon (University of Incheon International Cooperative Research Grant 2010)en
dc.description.statusPeer revieweden
dc.description.versionPublished Versionen
dc.format.mimetypeapplication/pdfen
dc.identifier.articleid172101
dc.identifier.citationPark, J.-T., Kim, J. Y., Lee, C.-W. and Colinge, J.-P. (2010) 'Low-temperature conductance oscillations in junctionless nanowire transistors', Applied Physics Letters, 97(17), pp. 172101. doi: 10.1063/1.3506899en
dc.identifier.doi10.1063/1.3506899
dc.identifier.endpage2
dc.identifier.issn0003-6951
dc.identifier.issn1077-3118
dc.identifier.issued17
dc.identifier.journaltitleApplied Physics Lettersen
dc.identifier.startpage1
dc.identifier.urihttps://hdl.handle.net/10468/4329
dc.identifier.volume97
dc.language.isoenen
dc.publisherAIP Publishingen
dc.relation.urihttp://aip.scitation.org/doi/abs/10.1063/1.3506899
dc.rights© 2010 American Institute of Physics.This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. The following article appeared in Park, J.-T., Kim, J. Y., Lee, C.-W. and Colinge, J.-P. (2010) 'Low-temperature conductance oscillations in junctionless nanowire transistors', Applied Physics Letters, 97(17), pp. 172101 and may be found at http://aip.scitation.org/doi/abs/10.1063/1.3506899en
dc.subjectNanowiresen
dc.subjectMOSFETsen
dc.subjectDopingen
dc.subjectMetal insulator semiconductor structuresen
dc.subjectTemperature measurementen
dc.titleLow-temperature conductance oscillations in junctionless nanowire transistorsen
dc.typeArticle (peer-reviewed)en
Files
Original bundle
Now showing 1 - 1 of 1
Thumbnail Image
Name:
3304.pdf
Size:
611.98 KB
Format:
Adobe Portable Document Format
Description:
Published Version
Download
Collections
Tyndall National Institute - Journal Articles