The effect of a varied NH3 flux on growth of AlN interlayers for InAlN/GaN heterostructures

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dc.contributor.authorSmith, Matthew D.
dc.contributor.authorSadler, Thomas C.
dc.contributor.authorLi, Haoning
dc.contributor.authorZubialevich, Vitaly Z.
dc.contributor.authorParbrook, Peter J.
dc.contributor.funderIrish Research Council for Science, Engineering and Technology
dc.contributor.funderScience Foundation Ireland
dc.contributor.funderEuropean Commission
dc.date.accessioned2017-07-28T09:23:22Z
dc.date.available2017-07-28T09:23:22Z
dc.date.issued2013
dc.description.abstractThe effects of AlN interlayer growth conditions on InAlN/AlN/GaN heterostructures are investigated, with interlayers imaged as they would appear prior to InAlN barrier layer deposition using surface atomic force microscopy scans undertaken immediately after growth. Surface morphologies and subsequent heterostructure conductivity suggested minimum on-resistance can be achieved by balancing the underlying GaN channel decomposition and interfacial roughening when deciding AlN interlayer growth parameters on a sapphire substrate of a given miscut. (C) 2013 AIP Publishing LLC. (DOI: 10.1063/1.4818645)en
dc.description.sponsorshipIrish Research Council (IRC) Embark Initiative; IRC EMPOWER initiative; Science Foundation Ireland; European Regional Development Fund “INSPIRE”en
dc.description.statusPeer revieweden
dc.description.versionPublished Versionen
dc.format.mimetypeapplication/pdfen
dc.identifier.articleid81602
dc.identifier.citationSmith, M. D., Sadler, T. C., Li, H., Zubialevich, V. Z. and Parbrook, P. J. (2013) 'The effect of a varied NH3 flux on growth of AlN interlayers for InAlN/GaN heterostructures', Applied Physics Letters, 103(8), pp. 081602. doi: 10.1063/1.4818645en
dc.identifier.doi10.1063/1.4818645
dc.identifier.endpage4
dc.identifier.issn0003-6951
dc.identifier.issn1077-3118
dc.identifier.issued8
dc.identifier.journaltitleApplied Physics Lettersen
dc.identifier.startpage1
dc.identifier.urihttps://hdl.handle.net/10468/4280
dc.identifier.volume103
dc.language.isoenen
dc.publisherAIP Publishingen
dc.relation.urihttp://aip.scitation.org/doi/abs/10.1063/1.4818645
dc.rights© 2013 AIP Publishing LLC..This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. The following article appeared in Smith, M. D., Sadler, T. C., Li, H., Zubialevich, V. Z. and Parbrook, P. J. (2013) 'The effect of a varied NH3 flux on growth of AlN interlayers for InAlN/GaN heterostructures', Applied Physics Letters, 103(8), pp. 081602 and may be found at http://aip.scitation.org/doi/abs/10.1063/1.4818645en
dc.subjectIII-V semiconductorsen
dc.subjectSapphireen
dc.subjectHeterojunctionsen
dc.subjectMODFETsen
dc.subjectAtomic force microscopyen
dc.titleThe effect of a varied NH3 flux on growth of AlN interlayers for InAlN/GaN heterostructuresen
dc.typeArticle (peer-reviewed)en
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