Impact of forming gas annealing on the performance of surface-channel In0.53Ga0.47As MOSFETs with an ALD Al2O3 gate dielectric

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dc.contributor.authorDjara, Vladimir
dc.contributor.authorCherkaoui, Karim
dc.contributor.authorSchmidt, Michael
dc.contributor.authorMonaghan, Scott
dc.contributor.authorO'Connor, Éamon
dc.contributor.authorPovey, Ian
dc.contributor.authorO'Connell, Dan
dc.contributor.authorPemble, Martyn E.
dc.contributor.authorHurley, Paul K.
dc.contributor.funderScience Foundation Irelanden
dc.date.accessioned2022-06-28T13:02:02Z
dc.date.available2022-06-28T13:02:02Z
dc.date.issued2012-02-17
dc.date.updated2022-06-27T10:57:26Z
dc.description.abstractWe investigated the effect of forming gas (5% H 2 /95% N 2 ) annealing on surface-channel In 0.53 Ga 0.47 As MOSFETs with atomic-layer-deposited Al 2 O 3 as the gate dielectric. We found that a forming gas anneal (FGA) at 300°C for 30 min was efficient at removing or passivating positive fixed charges in Al 2 O 3 , resulting in a shift of the threshold voltage from -0.63 to 0.43 V and in an increase in the I on / I off ratio of three orders of magnitude. Following FGA, the MOSFETs exhibited a subthreshold swing of 150 mV/dec, and the peak transconductance, drive current, and peak effective mobility increased by 29%, 25%, and 15%, respectively. FGA significantly improved the source- or drain-to-substrate junction isolation, with a reduction of two orders of magnitude in the reverse bias leakage exhibited by the Si-implanted In 0.53 Ga 0.47 As n + /p junctions, which is consistent with passivation of midgap defects in In 0.53 Ga 0.47 As by the FGA process.en
dc.description.sponsorshipScience Foundation Ireland (FORME Strategic Research Cluster Award 07/SRC/I1172F)en
dc.description.statusPeer revieweden
dc.description.versionAccepted Versionen
dc.format.mimetypeapplication/pdfen
dc.identifier.citationDjara, V., Cherkaoui, K., Schmidt, M., Monaghan, S., O'Connor, É., Povey, I. M., O'Connell, D., Pemble, M. E. and Hurley, P. K. (2012) 'Impact of forming gas annealing on the performance of surface-channel In0. 53Ga0. 47As MOSFETs with an ALD Al2O3 gate dielectric', IEEE Transactions on Electron Devices, 59(4), pp. 1084-1090. doi: 10.1109/TED.2012.2185242en
dc.identifier.doi10.1109/TED.2012.2185242en
dc.identifier.eissn1557-9646
dc.identifier.endpage1090en
dc.identifier.issn0018-9383
dc.identifier.issued4en
dc.identifier.journaltitleIEEE Transactions on Electron Devicesen
dc.identifier.startpage1084en
dc.identifier.urihttps://hdl.handle.net/10468/13324
dc.identifier.volume59en
dc.language.isoenen
dc.publisherInstitute of Electrical and Electronics Engineers (IEEE)en
dc.rights© 2012, IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works.en
dc.subjectForming gas anneal (FGA)en
dc.subjectHigh-ken
dc.subjectInGaAsen
dc.subjectMetal–oxide–semiconductor field-effect transistor (MOSFET)en
dc.subjectSurface channelen
dc.titleImpact of forming gas annealing on the performance of surface-channel In0.53Ga0.47As MOSFETs with an ALD Al2O3 gate dielectricen
dc.typeArticle (peer-reviewed)en
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