Modeling the capacitance-voltage response of In0.53Ga0.47As metal-oxide-semiconductor structures: Charge quantization and nonparabolic corrections

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dc.contributor.authorO'Regan, Terrance P.
dc.contributor.authorHurley, Paul K.
dc.contributor.authorSorée, Bart
dc.contributor.authorFischetti, Massimo V.
dc.contributor.funderScience Foundation Ireland
dc.date.accessioned2017-07-28T11:22:09Z
dc.date.available2017-07-28T11:22:09Z
dc.date.issued2010
dc.description.abstractThe capacitance-voltage (C-V) characteristic is calculated for p-type In0.53Ga0.47As metal-oxide-semiconductor (MOS) structures based on a self-consistent Poisson-Schroumldinger solution. For strong inversion, charge quantization leads to occupation of the satellite valleys which appears as a sharp increase in the capacitance toward the oxide capacitance. The results indicate that the charge quantization, even in the absence of interface defects (D-it), is a contributing factor to the experimental observation of an almost symmetric C-V response for In0.53Ga0.47As MOS structures. In addition, nonparabolic corrections are shown to enhance the depopulation of the Gamma valley, shifting the capacitance increase to lower inversion charge densities. (C) 2010 American Institute of Physics. (doi:10.1063/1.3436645)en
dc.description.sponsorshipScience Foundation Ireland (through the U.S.-Ireland Research Project Project No. 08/U.S./I1546)en
dc.description.statusPeer revieweden
dc.description.versionPublished Versionen
dc.format.mimetypeapplication/pdfen
dc.identifier.articleid213514
dc.identifier.citationO’Regan, T. P., Hurley, P. K., Sorée, B. and Fischetti, M. V. (2010) 'Modeling the capacitance-voltage response of In0.53Ga0.47As metal-oxide-semiconductor structures: Charge quantization and nonparabolic corrections', Applied Physics Letters, 96(21), pp. 213514. doi: 10.1063/1.3436645en
dc.identifier.doi10.1063/1.3436645
dc.identifier.endpage3
dc.identifier.issn0003-6951
dc.identifier.issn1077-3118
dc.identifier.issued21
dc.identifier.journaltitleApplied Physics Lettersen
dc.identifier.startpage1
dc.identifier.urihttps://hdl.handle.net/10468/4341
dc.identifier.volume96
dc.language.isoenen
dc.publisherAIP Publishingen
dc.relation.urihttp://aip.scitation.org/doi/abs/10.1063/1.3436645
dc.rights© 2010 American Institute of Physics.This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. The following article appeared in O’Regan, T. P., Hurley, P. K., Sorée, B. and Fischetti, M. V. (2010) 'Modeling the capacitance-voltage response of In0.53Ga0.47As metal-oxide-semiconductor structures: Charge quantization and nonparabolic corrections', Applied Physics Letters, 96(21), pp. 213514 and may be found at http://aip.scitation.org/doi/abs/10.1063/1.3436645en
dc.subjectInversion-layersen
dc.subjectBand-structureen
dc.subjectMOSFETsen
dc.subjectAluminium compoundsen
dc.subjectCapacitanceen
dc.subjectCharge density wavesen
dc.subjectGallium arsenideen
dc.subjectIII-V semiconductorsen
dc.subjectIndium compoundsen
dc.subjectMIS structuresen
dc.subjectPoisson equationen
dc.subjectSCF calculationsen
dc.subjectSchrodinger equationen
dc.subjectMetal insulator semiconductor structuresen
dc.subjectCapacitanceen
dc.subjectInterface structureen
dc.subjectSemiconductorsen
dc.titleModeling the capacitance-voltage response of In0.53Ga0.47As metal-oxide-semiconductor structures: Charge quantization and nonparabolic correctionsen
dc.typeArticle (peer-reviewed)en
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