Investigation of high-κ/InxGa1-xAs interfaces

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dc.contributor.authorCherkaoui, Karim
dc.contributor.authorO'Connor, Éamon
dc.contributor.authorMonaghan, Scott
dc.contributor.authorLong, Rathnait D.
dc.contributor.authorDjara, Vladimir
dc.contributor.authorO'Mahony, A.
dc.contributor.authorNagle, R.
dc.contributor.authorPemble, Martyn E.
dc.contributor.authorHurley, Paul K.
dc.contributor.funderScience Foundation Irelanden
dc.contributor.funderEnterprise Irelanden
dc.date.accessioned2022-06-28T10:43:49Z
dc.date.available2022-06-28T10:43:49Z
dc.date.issued2010-01
dc.date.updated2022-06-27T10:41:05Z
dc.description.abstractThe quality of the high-k/InxGa1-xAs interface is a crucial factor in achieving high electron mobility compound semiconductor field effect transistors. Capacitance and conductance characterisation methods were employed to evaluate different high-k/InGaAs interfaces. This paper will first discuss the specificity of capacitance voltage characteristics of compound semiconductor MOS structures, and then the recent progress in the study of high k/InxGa1 xAs interfaces will be presented. The capacitance and conductance measurements are combined to provide a picture of the interface state density. We have also investigated the merit of using intermediate k value dielectrics such as Al2O3 and MgO as interface control layers between the semiconductor and the main high k layer.en
dc.description.sponsorshipEnterprise Ireland (Grant No IR-2008-0006 ENGAGE)en
dc.description.statusPeer revieweden
dc.description.versionAccepted Versionen
dc.format.mimetypeapplication/pdfen
dc.identifier.citationCherkaoui, K., O’Connor, É., Monaghan, S., Long, R. D., Djara, V., O'Mahony, A., Nagle, R., Pemble, M. E. and Hurley, P. K. (2010) 'Investigation of high-κ/InxGa1-xAs interfaces', ECS Transactions, 28(2), pp. 181-190. doi: 10.1149/1.3372574en
dc.identifier.doi10.1149/1.3372574en
dc.identifier.eissn1938-6737
dc.identifier.endpage190en
dc.identifier.issn1938-5862
dc.identifier.issued2en
dc.identifier.journaltitleECS Transactionsen
dc.identifier.startpage181en
dc.identifier.urihttps://hdl.handle.net/10468/13320
dc.identifier.volume28en
dc.language.isoenen
dc.publisherIOP Publishing Ltden
dc.relation.projectinfo:eu-repo/grantAgreement/SFI/SFI Strategic Research Cluster/07/SRC/I1172/IE/SRC FORME: Functional Oxides and Related Materials for Electronics/en
dc.rights© 2010, The Electrochemical Society.en
dc.subjectHigh-k/InxGa1-xAs interfaceen
dc.titleInvestigation of high-κ/InxGa1-xAs interfacesen
dc.typeArticle (peer-reviewed)en
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