Investigation of high-κ/InxGa1-xAs interfaces
dc.contributor.author | Cherkaoui, Karim | |
dc.contributor.author | O'Connor, Éamon | |
dc.contributor.author | Monaghan, Scott | |
dc.contributor.author | Long, Rathnait D. | |
dc.contributor.author | Djara, Vladimir | |
dc.contributor.author | O'Mahony, A. | |
dc.contributor.author | Nagle, R. | |
dc.contributor.author | Pemble, Martyn E. | |
dc.contributor.author | Hurley, Paul K. | |
dc.contributor.funder | Science Foundation Ireland | en |
dc.contributor.funder | Enterprise Ireland | en |
dc.date.accessioned | 2022-06-28T10:43:49Z | |
dc.date.available | 2022-06-28T10:43:49Z | |
dc.date.issued | 2010-01 | |
dc.date.updated | 2022-06-27T10:41:05Z | |
dc.description.abstract | The quality of the high-k/InxGa1-xAs interface is a crucial factor in achieving high electron mobility compound semiconductor field effect transistors. Capacitance and conductance characterisation methods were employed to evaluate different high-k/InGaAs interfaces. This paper will first discuss the specificity of capacitance voltage characteristics of compound semiconductor MOS structures, and then the recent progress in the study of high k/InxGa1 xAs interfaces will be presented. The capacitance and conductance measurements are combined to provide a picture of the interface state density. We have also investigated the merit of using intermediate k value dielectrics such as Al2O3 and MgO as interface control layers between the semiconductor and the main high k layer. | en |
dc.description.sponsorship | Enterprise Ireland (Grant No IR-2008-0006 ENGAGE) | en |
dc.description.status | Peer reviewed | en |
dc.description.version | Accepted Version | en |
dc.format.mimetype | application/pdf | en |
dc.identifier.citation | Cherkaoui, K., O’Connor, É., Monaghan, S., Long, R. D., Djara, V., O'Mahony, A., Nagle, R., Pemble, M. E. and Hurley, P. K. (2010) 'Investigation of high-κ/InxGa1-xAs interfaces', ECS Transactions, 28(2), pp. 181-190. doi: 10.1149/1.3372574 | en |
dc.identifier.doi | 10.1149/1.3372574 | en |
dc.identifier.eissn | 1938-6737 | |
dc.identifier.endpage | 190 | en |
dc.identifier.issn | 1938-5862 | |
dc.identifier.issued | 2 | en |
dc.identifier.journaltitle | ECS Transactions | en |
dc.identifier.startpage | 181 | en |
dc.identifier.uri | https://hdl.handle.net/10468/13320 | |
dc.identifier.volume | 28 | en |
dc.language.iso | en | en |
dc.publisher | IOP Publishing Ltd | en |
dc.relation.project | info:eu-repo/grantAgreement/SFI/SFI Strategic Research Cluster/07/SRC/I1172/IE/SRC FORME: Functional Oxides and Related Materials for Electronics/ | en |
dc.rights | © 2010, The Electrochemical Society. | en |
dc.subject | High-k/InxGa1-xAs interface | en |
dc.title | Investigation of high-κ/InxGa1-xAs interfaces | en |
dc.type | Article (peer-reviewed) | en |