Resonance assisted jump-in voltage reduction for electrostatically actuated nanobeam-based gateless NEM switches.

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dc.contributor.authorMeija, Raimonds
dc.contributor.authorLivshits, Alexander I.
dc.contributor.authorKosmaca, Jelena
dc.contributor.authorJasulaneca, Liga
dc.contributor.authorAndzane, Jana
dc.contributor.authorBiswas, Subhajit
dc.contributor.authorHolmes, Justin D.
dc.contributor.authorErts, Donats
dc.contributor.funderEuropean Regional Development Funden
dc.contributor.funderScience Foundation Irelanden
dc.date.accessioned2019-07-22T11:13:52Z
dc.date.available2019-07-22T11:13:52Z
dc.date.issued2019-07-08
dc.date.updated2019-07-19T07:31:06Z
dc.description.abstractElectrostatically actuated nanobeam-based electromechanical switches have shown promise for versatile novel applications, such as low power devices. However, their widespread use is restricted due to poor reliability resulting from high jump-in voltages. This article reports a new method for lowering the jump-in voltage by inducing mechanical oscillations in the active element during the switching ON process, reducing the jump-in voltage by more than three times. Ge0.91Sn0.09 alloy and Bi2Se3 nanowire-based nanoelectromechanical switches were constructed in situ to demonstrate the operation principles and advantages of the proposed method.en
dc.description.sponsorshipEuropean Regional Development Fund (ERDF project ‘Creation of nanoelectromechanical switches’ (Project No. 1.1.1.1/16/A/256);en
dc.description.statusPeer revieweden
dc.description.versionAccepted Versionen
dc.format.mimetypeapplication/pdfen
dc.identifier.articleid385203en
dc.identifier.citationMeija, R., Livshits, A. I., Kosmaca, J., Jasulaneca, L., Andzane, J., Biswas, S., Holmes, J. D. and Erts, D. (2019) 'Resonance assisted jump-in voltage reduction for electrostatically actuated nanobeam-based gateless NEM switches', Nanotechnology, 30(38), 385203 (6 pp). doi: 10.1088/1361-6528/ab2b11en
dc.identifier.doi10.1088/1361-6528/ab2b11en
dc.identifier.endpage6en
dc.identifier.issn1361-6528
dc.identifier.issued38en
dc.identifier.journaltitleNanotechnologyen
dc.identifier.startpage1en
dc.identifier.urihttps://hdl.handle.net/10468/8213
dc.identifier.volume30en
dc.language.isoenen
dc.publisherIOP Publishingen
dc.relation.projectinfo:eu-repo/grantAgreement/SFI/SFI Investigator Programme/14/IA/2513/IE/Silicon Compatible, Direct Band-Gap Nanowire Materials For Beyond-CMOS Devices/en
dc.relation.urihttps://iopscience.iop.org/article/10.1088/1361-6528/ab2b11
dc.rights© 2019 IOP Publishing Ltd. This is an author-created, un-copyedited version of an article accepted for publication in Nanotechnology The publisher is not responsible for any errors or omissions in this version of the manuscript or any version derived from it. The Version of Record is available online at https://doi.org/10.1088/1361-6528/ab2b11. As the Version of Record of this article has been published on a subscription basis, this Accepted Manuscript will be available for reuse under a CC BY-NC-ND 3.0 licence after a 12 month embargo period.en
dc.rights.urihttps://creativecommons.org/licences/by-nc-nd/3.0en
dc.subjectNEMSen
dc.subjectNanowireen
dc.subjectResonanceen
dc.subjectSwitchen
dc.subjectBi2Se3en
dc.subjectGeSnen
dc.titleResonance assisted jump-in voltage reduction for electrostatically actuated nanobeam-based gateless NEM switches.en
dc.typeArticle (peer-reviewed)en
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