Resonance assisted jump-in voltage reduction for electrostatically actuated nanobeam-based gateless NEM switches.
dc.contributor.author | Meija, Raimonds | |
dc.contributor.author | Livshits, Alexander I. | |
dc.contributor.author | Kosmaca, Jelena | |
dc.contributor.author | Jasulaneca, Liga | |
dc.contributor.author | Andzane, Jana | |
dc.contributor.author | Biswas, Subhajit | |
dc.contributor.author | Holmes, Justin D. | |
dc.contributor.author | Erts, Donats | |
dc.contributor.funder | European Regional Development Fund | en |
dc.contributor.funder | Science Foundation Ireland | en |
dc.date.accessioned | 2019-07-22T11:13:52Z | |
dc.date.available | 2019-07-22T11:13:52Z | |
dc.date.issued | 2019-07-08 | |
dc.date.updated | 2019-07-19T07:31:06Z | |
dc.description.abstract | Electrostatically actuated nanobeam-based electromechanical switches have shown promise for versatile novel applications, such as low power devices. However, their widespread use is restricted due to poor reliability resulting from high jump-in voltages. This article reports a new method for lowering the jump-in voltage by inducing mechanical oscillations in the active element during the switching ON process, reducing the jump-in voltage by more than three times. Ge0.91Sn0.09 alloy and Bi2Se3 nanowire-based nanoelectromechanical switches were constructed in situ to demonstrate the operation principles and advantages of the proposed method. | en |
dc.description.sponsorship | European Regional Development Fund (ERDF project ‘Creation of nanoelectromechanical switches’ (Project No. 1.1.1.1/16/A/256); | en |
dc.description.status | Peer reviewed | en |
dc.description.version | Accepted Version | en |
dc.format.mimetype | application/pdf | en |
dc.identifier.articleid | 385203 | en |
dc.identifier.citation | Meija, R., Livshits, A. I., Kosmaca, J., Jasulaneca, L., Andzane, J., Biswas, S., Holmes, J. D. and Erts, D. (2019) 'Resonance assisted jump-in voltage reduction for electrostatically actuated nanobeam-based gateless NEM switches', Nanotechnology, 30(38), 385203 (6 pp). doi: 10.1088/1361-6528/ab2b11 | en |
dc.identifier.doi | 10.1088/1361-6528/ab2b11 | en |
dc.identifier.endpage | 6 | en |
dc.identifier.issn | 1361-6528 | |
dc.identifier.issued | 38 | en |
dc.identifier.journaltitle | Nanotechnology | en |
dc.identifier.startpage | 1 | en |
dc.identifier.uri | https://hdl.handle.net/10468/8213 | |
dc.identifier.volume | 30 | en |
dc.language.iso | en | en |
dc.publisher | IOP Publishing | en |
dc.relation.project | info:eu-repo/grantAgreement/SFI/SFI Investigator Programme/14/IA/2513/IE/Silicon Compatible, Direct Band-Gap Nanowire Materials For Beyond-CMOS Devices/ | en |
dc.relation.uri | https://iopscience.iop.org/article/10.1088/1361-6528/ab2b11 | |
dc.rights | © 2019 IOP Publishing Ltd. This is an author-created, un-copyedited version of an article accepted for publication in Nanotechnology The publisher is not responsible for any errors or omissions in this version of the manuscript or any version derived from it. The Version of Record is available online at https://doi.org/10.1088/1361-6528/ab2b11. As the Version of Record of this article has been published on a subscription basis, this Accepted Manuscript will be available for reuse under a CC BY-NC-ND 3.0 licence after a 12 month embargo period. | en |
dc.rights.uri | https://creativecommons.org/licences/by-nc-nd/3.0 | en |
dc.subject | NEMS | en |
dc.subject | Nanowire | en |
dc.subject | Resonance | en |
dc.subject | Switch | en |
dc.subject | Bi2Se3 | en |
dc.subject | GeSn | en |
dc.title | Resonance assisted jump-in voltage reduction for electrostatically actuated nanobeam-based gateless NEM switches. | en |
dc.type | Article (peer-reviewed) | en |
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