Edge-coupling of O-Band InP etched-facet lasers to polymer waveguides on SOI by micro-transfer-printing

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dc.contributor.authorLoi, Ruggero
dc.contributor.authorIadanza, Simone
dc.contributor.authorRoycroft, Brendan
dc.contributor.authorO'Callaghan, James
dc.contributor.authorLiu, Lei
dc.contributor.authorThomas, Kevin
dc.contributor.authorGocalińska, Agnieszka M.
dc.contributor.authorPelucchi, Emanuele
dc.contributor.authorFarrell, Alexander
dc.contributor.authorKelleher, Steven
dc.contributor.authorGul, Raja Fazan
dc.contributor.authorTrindade, António José
dc.contributor.authorGomez, David
dc.contributor.authorO'Faolain, Liam
dc.contributor.authorCorbett, Brian
dc.contributor.funderScience Foundation Irelanden
dc.contributor.funderHorizon 2020en
dc.contributor.funderEuropean Research Councilen
dc.date.accessioned2020-01-06T15:09:06Z
dc.date.available2020-01-06T15:09:06Z
dc.date.issued2019-12-09
dc.date.updated2020-01-06T14:59:45Z
dc.description.abstractO-band InP etched facets lasers were heterogeneously integrated by micro-transfer-printing into a 1.54 µm deep recess created in the 3 µm thick oxide layer of a 220 nm SOI wafer. A 7 × 1.5 µm2 cross-section, 2 mm long multimode polymer waveguide was aligned to the ridge post-integration by e-beam lithography with <0.7 µm lateral misalignment and incorporated a tapered silicon waveguide. A 170 nm thick metal layer positioned at the bottom of the recess adjusts the vertical alignment of the laser and serves as a thermal via to sink the heat to the Si substrate. This strategy shows a roadmap for active polymer waveguide-based photonic integrated circuits.en
dc.description.sponsorshipScience Foundation Ireland (15/IA/2864)en
dc.description.statusPeer revieweden
dc.description.versionPublished Versionen
dc.format.mimetypeapplication/pdfen
dc.identifier.citationLoi, R., Iadanza, S., Roycroft, B., O’Callaghan, J., Liu, L., Thomas, K., Gocalinska, A., Pelucchi, E., Farrell, A., Kelleher, S., Gul, R. F., Trindade, A. J., Gomez, D., O’Faolain, L. and Corbett, B. (2020) 'Edge-Coupling of O-Band InP Etched-Facet Lasers to Polymer Waveguides on SOI by Micro-Transfer-Printing', IEEE Journal of Quantum Electronics, 56(1), pp. 1-8. doi: 10.1109/JQE.2019.2958365en
dc.identifier.doi10.1109/JQE.2019.2958365en
dc.identifier.endpage8en
dc.identifier.issn1558-1713
dc.identifier.issued1en
dc.identifier.journaltitleIEEE Journal of Quantum Electronicsen
dc.identifier.startpage1en
dc.identifier.urihttps://hdl.handle.net/10468/9453
dc.identifier.volume56en
dc.language.isoenen
dc.publisherInstitute of Electrical and Electronics Engineers (IEEE)en
dc.relation.projectinfo:eu-repo/grantAgreement/SFI/SFI Research Centres/12/RC/2276/IE/I-PIC Irish Photonic Integration Research Centre/en
dc.relation.projectinfo:eu-repo/grantAgreement/EC/H2020::RIA/645314/EU/Transfer-print operations for heterogeneous integration/TOP HITen
dc.relation.projectinfo:eu-repo/grantAgreement/EC/FP7::SP2::ERC/337508/EU/DAtacommunications based on NanophotoniC Resonators/DANCERen
dc.relation.urihttps://ieeexplore.ieee.org/document/8928514
dc.rights© 2020 the authors. Published by IEEE. This work is licensed under a Creative Commons Attribution 4.0 License. For more information, see http://creativecommons.org/licenses/by/4.0/en
dc.rights.urihttp://creativecommons.org/licenses/by/4.0/en
dc.subjectWaveguide lasersen
dc.subjectOptical waveguidesen
dc.subjectPolymersen
dc.subjectSiliconen
dc.subjectLaser modesen
dc.subjectSubstratesen
dc.subjectMetalsen
dc.subjectHeterogeneous integrationen
dc.subjectIII-V semiconductors laseren
dc.subjectsilicon photonicsen
dc.subjectpolymer waveguidesen
dc.titleEdge-coupling of O-Band InP etched-facet lasers to polymer waveguides on SOI by micro-transfer-printingen
dc.typeArticle (peer-reviewed)en
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