Raman scattering spectroscopy of metal-assisted chemically etched rough nanowires

Glynn, Colm; Lotty, Olan; McSweeney, William; Holmes, Justin D.; O'Dwyer, Colm

Raman scattering spectroscopy of metal-assisted chemically etched rough nanowires

Files

Montreal_2011_Raman_SiNW-final.pdf(1.08 MB)

Accepted version

Date

2011-04

Authors

Glynn, Colm

Lotty, Olan

McSweeney, William

Holmes, Justin D.

O'Dwyer, Colm

Publisher

Electrochemical Society

Published Version

10.1149/1.3654199

Abstract

Silicon nanowires were fabricated by a metal assisted chemical (MAC) etching process and routes toward ohmic contacting of substrates for Li-ion battery anode application were developed. Si nanowire layers are comprised of wires that are single crystal with rough outer surfaces. The nanowires are epitaxial with the underlying Si(100) substrate, maintain equivalent doping density and crystal orientation, and are coated with a stoichiometric SiO2. Electrical backside contacting using an In-Ga eutectic allows low-resistance ohmic contacts to low-doped nanowire electrodes for electrochemical testing.

Keywords

Scattering , Crystal orientation , Nanowires , Phonons , Raman scattering , Semiconducting silicon , Semiconductor doping , Silicon compounds , Single crystals , Substrates , Bulk substrates , Confined phonons , Excitation light , Induced heating , Localized beams , Mesoporous , Metal-assisted chemical etching , Phonon mode , Phonon quantum confinement effects , Raman modes , Raman scattering spectra , Raman scattering spectroscopy , Scattering process , Si nanowire , Si substrates

Citation

McSweeney, W., Lotty, O., Holmes, J. D. and O'Dwyer, C. (2011) 'Fabrication and Characterization of Single-Crystal Metal-Assisted Chemically Etched Rough Si Nanowires for Lithium-Ion Battery Anodes', ECS Transactions, 35(34), pp. 25-34. doi: 10.1149/1.3654199