Raman scattering spectroscopy of metal-assisted chemically etched rough nanowires

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dc.contributor.authorGlynn, Colm
dc.contributor.authorLotty, Olan
dc.contributor.authorMcSweeney, William
dc.contributor.authorHolmes, Justin D.
dc.contributor.authorO'Dwyer, Colm
dc.contributor.funderHigher Education Authorityen
dc.date.accessioned2018-06-13T14:54:24Z
dc.date.available2018-06-13T14:54:24Z
dc.date.issued2011-04
dc.date.updated2018-06-11T21:43:12Z
dc.description.abstractSilicon nanowires were fabricated by a metal assisted chemical (MAC) etching process and routes toward ohmic contacting of substrates for Li-ion battery anode application were developed. Si nanowire layers are comprised of wires that are single crystal with rough outer surfaces. The nanowires are epitaxial with the underlying Si(100) substrate, maintain equivalent doping density and crystal orientation, and are coated with a stoichiometric SiO2. Electrical backside contacting using an In-Ga eutectic allows low-resistance ohmic contacts to low-doped nanowire electrodes for electrochemical testing.en
dc.description.sponsorshipHigher Education Authority (under the framework of the INSPIRE programme, funded by the Irish Government's Programme for Research in Third Level Institutions, Cycle 4, National Development Plan 2007-2013)en
dc.description.statusPeer revieweden
dc.description.versionAccepted Versionen
dc.format.mimetypeapplication/pdfen
dc.identifier.citationMcSweeney, W., Lotty, O., Holmes, J. D. and O'Dwyer, C. (2011) 'Fabrication and Characterization of Single-Crystal Metal-Assisted Chemically Etched Rough Si Nanowires for Lithium-Ion Battery Anodes', ECS Transactions, 35(34), pp. 25-34. doi: 10.1149/1.3654199en
dc.identifier.doi10.1149/1.3654199
dc.identifier.endpage86en
dc.identifier.issn1938-5862
dc.identifier.journaltitleECS Transactionsen
dc.identifier.startpage73en
dc.identifier.urihttps://hdl.handle.net/10468/6296
dc.identifier.volume35en
dc.language.isoenen
dc.publisherElectrochemical Societyen
dc.relation.urihttp://ecst.ecsdl.org/content/35/34/25.abstract
dc.rights© 2011 ECS - The Electrochemical Societyen
dc.subjectScatteringen
dc.subjectCrystal orientationen
dc.subjectNanowiresen
dc.subjectPhononsen
dc.subjectRaman scatteringen
dc.subjectSemiconducting siliconen
dc.subjectSemiconductor dopingen
dc.subjectSilicon compoundsen
dc.subjectSingle crystalsen
dc.subjectSubstratesen
dc.subjectBulk substratesen
dc.subjectConfined phononsen
dc.subjectExcitation lighten
dc.subjectInduced heatingen
dc.subjectLocalized beamsen
dc.subjectMesoporousen
dc.subjectMetal-assisted chemical etchingen
dc.subjectPhonon modeen
dc.subjectPhonon quantum confinement effectsen
dc.subjectRaman modesen
dc.subjectRaman scattering spectraen
dc.subjectRaman scattering spectroscopyen
dc.subjectScattering processen
dc.subjectSi nanowireen
dc.subjectSi substratesen
dc.titleRaman scattering spectroscopy of metal-assisted chemically etched rough nanowiresen
dc.typeArticle (peer-reviewed)en
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