Semi-classical modeling of nanoscale nMOSFETs with III-V channel

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dc.contributor.authorPalestri, Pierpaolo
dc.contributor.authorCaruso, Enrico
dc.contributor.authorBadami, Oves
dc.contributor.authorDriussi, Francesco
dc.contributor.authorEsseni, David
dc.contributor.authorSelmi, Luca
dc.contributor.funderSeventh Framework Programmeen
dc.date.accessioned2019-07-10T08:40:30Z
dc.date.available2019-07-10T08:40:30Z
dc.date.issued2019-06-06
dc.date.updated2019-07-10T08:32:34Z
dc.description.abstractWe review recent results on the modeling of nanoscale nMOSFETs with III-V compounds channel material. The focus will be on semi-classical transport modeling in short channel devices; we will show that back-scattering in the channel still influences the device performance, and thus affects the choice of the channel material. The model ingredients necessary to describe III-V MOSFETs will be discussed, and major differences compared to modeling of silicon FETs will be highlighted.en
dc.description.statusPeer revieweden
dc.description.versionAccepted Versionen
dc.format.mimetypeapplication/pdfen
dc.identifier.citationPalestri, P., Caruso, E., Badami, O., Driussi, F., Esseni, D. and Selmi, L. (2019) 'Semi-classical modeling of nanoscale nMOSFETs with III-V channel', 2019 Electron Devices Technology and Manufacturing Conference (EDTM), Singapore, 12-15 March, pp. 234-236. doi: 10.1109/EDTM.2019.8731143en
dc.identifier.doi10.1109/EDTM.2019.8731143en
dc.identifier.endpage236en
dc.identifier.isbn978-1-5386-6508-4
dc.identifier.isbn978-1-5386-6509-1
dc.identifier.startpage234en
dc.identifier.urihttps://hdl.handle.net/10468/8126
dc.language.isoenen
dc.publisherInstitute of Electrical and Electronics Engineers (IEEE)en
dc.relation.projectinfo:eu-repo/grantAgreement/EC/FP7::SP1::ICT/619326/EU/Technology CAD for III-V Semiconductor-based MOSFETs/III-V-MOSen
dc.relation.urihttps://ieeexplore.ieee.org/document/8731143
dc.relation.urihttp://ewh.ieee.org/conf/edtm/2019/
dc.rights© 2019, IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works.en
dc.subjectIII-V semiconductorsen
dc.subjectMOSFETen
dc.subjectNanoelectronicsen
dc.subjectSemiconductor device modelsen
dc.subjectIII-V compounds channel materialen
dc.subjectSemiclassical transport modelingen
dc.subjectShort channel devicesen
dc.subjectNanoscale nMOSFETen
dc.subjectIII-V MOSFETen
dc.subjectChannel back-scatteringen
dc.subjectScatteringen
dc.subjectNanoscale devicesen
dc.subjectSemiconductor device modelingen
dc.subjectQuantization (signal)en
dc.subjectSiliconen
dc.subjectIonsen
dc.subjectSimulationen
dc.subjectMonte Carloen
dc.subjectIII-V compoundsen
dc.titleSemi-classical modeling of nanoscale nMOSFETs with III-V channelen
dc.typeConference itemen
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