Heterogeneous III-V on silicon nitride amplifiers and lasers via microtransfer printing

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dc.contributor.authorOp de Beeck, Camiel
dc.contributor.authorHaq, Bahawal
dc.contributor.authorElsinger, Lukas
dc.contributor.authorGocalińska, Agnieszka M.
dc.contributor.authorPelucchi, Emanuele
dc.contributor.authorCorbett, Brian
dc.contributor.authorRoelkens, Günther
dc.contributor.authorKuyken, Bart
dc.contributor.funderFonds Wetenschappelijk Onderzoeken
dc.date.accessioned2021-11-15T12:17:31Z
dc.date.available2021-11-15T12:17:31Z
dc.date.issued2020-04-24
dc.date.updated2021-11-15T12:09:32Z
dc.description.abstractThe development of ultralow-loss silicon-nitride-based waveguide platforms has enabled the realization of integrated optical filters with unprecedented performance. Such passive circuits, when combined with phase modulators and low-noise lasers, have the potential to improve the current state of the art of the most critical components in coherent communications, beam steering, and microwave photonics applications. However, the large refractive index difference between silicon nitride and common III-V gain materials in the telecom wavelength range hampers the integration of electrically pumped III-V semiconductor lasers on a silicon nitride waveguide chip. Here, we present an approach to overcome this refractive index mismatch by using an intermediate layer of hydrogenated amorphous silicon, followed by the microtransfer printing of a prefabricated III-V semiconductor optical amplifier. Following this approach, we demonstrate a heterogeneously integrated semiconductor optical amplifier on a silicon nitride waveguide circuit with up to 14 dB gain and a saturation power of 8 mW. We further demonstrate a heterogeneously integrated ring laser on a silicon nitride circuit operating around 1550 nm. This heterogeneous integration approach would not be limited to silicon-nitride-based platforms: it can be used advantageously for any waveguide platform with low-refractive-index waveguide materials such as lithium niobate.en
dc.description.sponsorshipFonds Wetenschappelijk Onderzoek (PhD scholarship)en
dc.description.statusPeer revieweden
dc.description.versionPublished Versionen
dc.format.mimetypeapplication/pdfen
dc.identifier.citationOp de Beeck, C., Haq, B., Elsinger, L., Gocalinska, A., Pelucchi, E., Corbett, B., Roelkens, G. and Kuyken, B. (2020) 'Heterogeneous III-V on silicon nitride amplifiers and lasers via microtransfer printing', Optica, 7(5), pp. 386-393. doi: 10.1364/OPTICA.382989en
dc.identifier.doi10.1364/OPTICA.382989en
dc.identifier.endpage393en
dc.identifier.issn2334-2536
dc.identifier.issued5en
dc.identifier.journaltitleOpticaen
dc.identifier.startpage386en
dc.identifier.urihttps://hdl.handle.net/10468/12215
dc.identifier.volume7en
dc.language.isoenen
dc.publisherOptica Publishing Groupen
dc.rights© 2020, Optical Society of America under the terms of the OSA Open Access Publishing Agreement.en
dc.subjectWave-guidesen
dc.subjectIntegrationen
dc.subjectPlatformen
dc.subjectChipen
dc.subjectFabry-Pérot lasersen
dc.titleHeterogeneous III-V on silicon nitride amplifiers and lasers via microtransfer printingen
dc.typeArticle (peer-reviewed)en
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