Design and fabrication of silicon-on-silicon-carbide substrates and power devices for space applications

Simple item page
dc.contributor.authorGammon, P. M.
dc.contributor.authorChan, C. W.
dc.contributor.authorGity, Farzan
dc.contributor.authorTrajkovic, T.
dc.contributor.authorKilchytska, V.
dc.contributor.authorFan, L.
dc.contributor.authorPathirana, V.
dc.contributor.authorCamuso, G.
dc.contributor.authorBen Ali, K.
dc.contributor.authorFlandre, Denis
dc.contributor.authorMawby, P. A.
dc.contributor.funderEuropean Commissionen
dc.contributor.funderRoyal Academy of Engineeringen
dc.contributor.funderEngineering and Physical Sciences Research Councilen
dc.contributor.funderHorizon 2020en
dc.date.accessioned2017-06-16T14:18:11Z
dc.date.available2017-06-16T14:18:11Z
dc.date.issued2017-05-23
dc.description.abstractA new generation of power electronic semiconductor devices are being developed for the benefit of space and terrestrial harsh-environment applications. 200-600 V lateral transistors and diodes are being fabricated in a thin layer of silicon (Si) wafer bonded to silicon carbide (SiC). This novel silicon-on-silicon-carbide (Si/SiC) substrate solution promises to combine the benefits of silicon-on-insulator (SOI) technology (i.e device confinement, radiation tolerance, high and low temperature performance) with that of SiC (i.e. high thermal conductivity, radiation hardness, high temperature performance). Details of a process are given that produces thin films of silicon 1, 2 and 5 μm thick on semi-insulating 4H-SiC. Simulations of the hybrid Si/SiC substrate show that the high thermal conductivity of the SiC offers a junction-to-case temperature ca. 4× less that an equivalent SOI device; reducing the effects of self-heating, and allowing much greater power density. Extensive electrical simulations are used to optimise a 600 V laterally diffused metal-oxide-semiconductor field-effect transistor (LDMOSFET) implemented entirely within the silicon thin film, and highlight the differences between Si/SiC and SOI solutions.en
dc.description.sponsorshipEngineering and Physical Sciences Research Council (EPSRC (Project EP/N00647X/1))en
dc.description.statusPeer revieweden
dc.description.versionPublished Versionen
dc.format.mimetypeapplication/pdfen
dc.identifier.citationGammon, P. M., Chan, C. W., Gity, F., Trajkovic, T., Kilchytska, V., Fan, L., Pathirana, V., Camuso, G., Ben Ali, K., Flandre, D., Mawby, P. A. and Gardner, J. W. (2017) 'Design and Fabrication of Silicon-on-Silicon-Carbide Substrates and Power Devices for Space Applications', ES3 Web of Conferences., 16, pp. 12003. doi: 10.1051/e3sconf/20171612003en
dc.identifier.doi10.1051/e3sconf/20171612003
dc.identifier.endpage12003-5en
dc.identifier.issn2267-1242
dc.identifier.journaltitleES3 Web of Conferencesen
dc.identifier.startpage12003-1en
dc.identifier.urihttps://hdl.handle.net/10468/4086
dc.identifier.volume16en
dc.language.isoenen
dc.publisherEDP Sciencesen
dc.relation.projectinfo:eu-repo/grantAgreement/EC/H2020::RIA/687361/EU/Si on SiC for the Harsh Environment of Space/SaSHaen
dc.rights© The Authors, published by EDP Sciences, 2017. This is an Open Access article distributed under the terms of the Creative Commons Attribution License 4.0, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.en
dc.rights.urihttp://creativecommons.org/licenses/by/4.0/).en
dc.subjectPower electronic semiconductor devicesen
dc.subjectThermal conductivityen
dc.subjectSilicon thin filmen
dc.subjectTerrestrial harsh-environment applicationsen
dc.subjectSpace harsh-environment applicationsen
dc.subjectSilicon-on-silicon-carbide (Si/SiC)en
dc.titleDesign and fabrication of silicon-on-silicon-carbide substrates and power devices for space applicationsen
dc.typeArticle (peer-reviewed)en
Files
Original bundle
Now showing 1 - 1 of 1
Thumbnail Image
Name:
2973.pdf
Size:
1.05 MB
Format:
Adobe Portable Document Format
Description:
Published Version
Download
License bundle
Now showing 1 - 1 of 1
Thumbnail Image
Name:
license.txt
Size:
2.71 KB
Format:
Item-specific license agreed upon to submission
Description:
Download
Collections
Tyndall National Institute - Journal Articles