Can Metal/Al2O3/In0.53Ga0.47As/InP MOSCAP properties translate to Metal/Al2O3/In0.53Ga0.47As/InP MOSFET characteristics?

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dc.contributor.authorCherkaoui, Karim
dc.contributor.authorDjara, Vladimir
dc.contributor.authorO'Connor, Éamon
dc.contributor.authorLin, Jun
dc.contributor.authorNegara, Muhammad A.
dc.contributor.authorPovey, Ian M.
dc.contributor.authorMonaghan, Scott
dc.contributor.authorHurley, Paul K.
dc.contributor.funderScience Foundation Irelanden
dc.contributor.funderEnterprise Irelanden
dc.date.accessioned2022-06-28T12:09:26Z
dc.date.available2022-06-28T12:09:26Z
dc.date.issued2012
dc.date.updated2022-06-27T10:47:50Z
dc.description.abstractIn this paper we present the electrical characteristics of Metal/Al2O3/In0.53Ga0.47As/InP MOS capacitor (MOSCAP) structures formed using a relatively straightforward capacitor process flow and for MOSCAPs which experience the full process flow of an In0.53Ga0.47As n channel MOSFET. From analysis of the capacitance-voltage response over a range of ac signal frequencies fixed oxide charge densities and interface state concentrations are determined for the MOSCAP structures and the impact of forming gas annealing on oxide and interface state densities is presented. The MOSCAP results are compared to the properties of fully processed metal/Al2O3/In0.53Ga0.47As/InP n channel MOSFETs, and the results indicate that the findings from the MOSCAPS do translate to the measured InGaAs MOSFET characteristics.en
dc.description.sponsorshipEnterprise Ireland (Grant No IR-2008-0006 ENGAGE)en
dc.description.statusPeer revieweden
dc.description.versionAccepted Versionen
dc.format.mimetypeapplication/pdfen
dc.identifier.citationCherkaoui, K., Djara, Vladimir., O'Connor, É., Lin, J., Negara, M. A., Povey, I. M., Monaghan, S. and Hurley, P. K. (2012) 'Can Metal/Al2O3/In0.53Ga0.47As/InP MOSCAP properties translate to Metal/Al2O3/In0.53Ga0.47As/InP MOSFET characteristics?', ECS Transactions, 45(3), pp. 79-88. doi: 10.1149/1.3700874en
dc.identifier.doi10.1149/1.3700874en
dc.identifier.eissn1938-6737
dc.identifier.endpage88en
dc.identifier.issn1938-5862
dc.identifier.issued3en
dc.identifier.journaltitleECS Transactionsen
dc.identifier.startpage79en
dc.identifier.urihttps://hdl.handle.net/10468/13323
dc.identifier.volume45en
dc.language.isoenen
dc.publisherIOP Publishing Ltden
dc.relation.projectinfo:eu-repo/grantAgreement/SFI/SFI Strategic Research Cluster/07/SRC/I1172/IE/SRC FORME: Functional Oxides and Related Materials for Electronics/en
dc.rights© 2012, The Electrochemical Society.en
dc.subjectMetal/Al2O3/In0.53Ga0.47As/InP MOS capacitor (MOSCAP)en
dc.subjectIn0.53Ga0.47As n channel MOSFETen
dc.titleCan Metal/Al2O3/In0.53Ga0.47As/InP MOSCAP properties translate to Metal/Al2O3/In0.53Ga0.47As/InP MOSFET characteristics?en
dc.typeArticle (peer-reviewed)en
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