Conformal and non-destructive doping towards gate-all-around nanowire devices

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dc.availability.bitstreamopenaccess
dc.contributor.advisorDuffy, Rayen
dc.contributor.authorMeaney, Fintan
dc.contributor.funderEnterprise Irelanden
dc.contributor.funderApplied Materialsen
dc.date.accessioned2020-09-25T10:08:06Z
dc.date.available2020-09-25T10:08:06Z
dc.date.issued2020-09-01
dc.date.submitted2020-09-01
dc.description.abstractDue to the approach of fundamental 2D topological limits, scaling of silicon transistors towards GAA devices will be required. This thesis will discuss why continued scaling towards GAA devices will require novel doping processes and suggest possible technologies to suit this application. Chapter 1 will detail an introduction to this topic and discuss current possible solution to 3D doping as well as explain some of the different techniques uses throughout the work Chapter 2 discusses gas phase doping as a promising candidate as it has a superior ability to conformally dope tight 3D architectures, when compared to ion implantation. This process needs to be optimised to find a balance between the potential to etch on one hand and deposit potentially unwanted layers on the other. Further work currently ongoing to limit the thermal budget of these process will also play a critical role in their applications in modern semiconductor processing where temperature sensitive materials are ever more present. Chapter 3 presents a one step process that simplifies traditional ion implantation while also displaying a possible route toward high levels of activation at lower temperatures. The electrical characterisation of these devices will show how this process needs further optimisation to reach conductivity levels required for GAA transistors.en
dc.description.statusNot peer revieweden
dc.description.versionAccepted Versionen
dc.format.mimetypeapplication/pdfen
dc.identifier.citationMeaney, F. 2020. Conformal and non-destructive doping towards gate-all-around nanowire devices. MRes Thesis, University College Cork.en
dc.identifier.endpage64en
dc.identifier.urihttps://hdl.handle.net/10468/10585
dc.language.isoenen
dc.publisherUniversity College Corken
dc.rights© 2020, Fintan Meaney.en
dc.rights.urihttps://creativecommons.org/licenses/by-nc-sa/4.0/en
dc.subjectSiliconen
dc.subjectDopingen
dc.subjectNanowiresen
dc.titleConformal and non-destructive doping towards gate-all-around nanowire devicesen
dc.typeMasters thesis (Research)en
dc.type.qualificationlevelMastersen
dc.type.qualificationnameMSc - Master of Scienceen
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