A high-speed vertical transition for multi-layer A1N carrier boards designed by time-domain reflectometry

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dc.contributor.authorJezzini, Moises A.
dc.contributor.authorMarraccini, Philip J.
dc.contributor.authorPeters, Frank H.
dc.contributor.funderScience Foundation Irelanden
dc.contributor.funderEuropean Research Councilen
dc.contributor.funderHorizon 2020en
dc.date.accessioned2020-04-27T15:10:10Z
dc.date.available2020-04-27T15:10:10Z
dc.date.issued2019-06
dc.date.updated2020-04-27T14:59:00Z
dc.description.abstractHigh density, high speed photonic integrated circuits (PICs) have large numbers of closely spaced DC and RF contacts, which must be connected in the package. The use of multilayer carrier boards to interface between the contacts and the package gives high performance and high density. In order to be effective as a packaging solution, these multi-layer carrier boards need high-speed electrical channels with good performance. Also, the boards usually need high thermal conductivity to manage the heat. Co-fired aluminium nitride (A1N) has the needed high thermal conductivity. However, there are no designs of multi-layer high-speed channels in the literature for co-fired A1N. Therefore, this article presents a high-speed multi-layer channel for co-fired A1N and its measured results. Two transmission lines were designed that showed a measured loss of Ë 0.09dBmm-1 at 40GHz. The vertical transition allows for arbitrary planar rotations of the channel and showed a measured 3 dB bandwidth of 33 GHz and small penalties in the eye diagram with a 44 Gbits-1 signal. The channels showed crosstalk below -30 dB.en
dc.description.sponsorshipScience Foundation Ireland (SFI10/CE/I1853 (CTVR II) and SFI12/RC/2276 (IPIC)); European Commission ( European Research Council (ERC) under the European Union’s Horizon 2020 research and innovation programme (grant agreement numbers 780283-MORPHIC and 700930-PICTURE))en
dc.description.statusPeer revieweden
dc.description.versionAccepted Versionen
dc.format.mimetypeapplication/pdfen
dc.identifier.citationJezzini, M. A., Marraccini, P. J. and Peters, F. H. (2019) 'A High-speed Vertical Transition for Multi-layer A1N Carrier Boards Designed by Time-domain Reflectometry', Progress in Electromagnetics Research Symposium (PIERS) Rome, Italy, 17-20 June. doi: 10.1109/PIERS-Spring46901.2019.9017234en
dc.identifier.doi10.1109/PIERS-Spring46901.2019.9017234en
dc.identifier.endpage646en
dc.identifier.isbn978-1-7281-3403-1
dc.identifier.issn1559-9450
dc.identifier.startpage637en
dc.identifier.urihttps://hdl.handle.net/10468/9873
dc.language.isoenen
dc.publisherInstitute of Electrical and Electronics Engineers (IEEE)en
dc.relation.projectinfo:eu-repo/grantAgreement/SFI/SFI Research Centres/12/RC/2276/IE/I-PIC Irish Photonic Integration Research Centre/en
dc.relation.projectinfo:eu-repo/grantAgreement/EC/H2020::RIA/780283/EU/Mems-based zerO-power Reconfigurable PHotonic ICs/MORPHICen
dc.relation.urihttps://ieeexplore.ieee.org/document/9017234
dc.rights© 2019 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works.en
dc.subjectAluminum nitrideen
dc.subjectIII-V semiconductor materialsen
dc.subjectSpringsen
dc.subjectTime-domain analysisen
dc.subjectStandardsen
dc.subjectPhotonicsen
dc.titleA high-speed vertical transition for multi-layer A1N carrier boards designed by time-domain reflectometryen
dc.typeConference itemen
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