Multi-frequency inversion-charge pumping for charge separation and mobility analysis in high-k/InGaAs metal-oxide-semiconductor field-effect transistors

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dc.contributor.authorDjara, Vladimir
dc.contributor.authorCherkaoui, Karim
dc.contributor.authorNegara, M. A.
dc.contributor.authorHurley, Paul K.
dc.contributor.funderScience Foundation Ireland
dc.contributor.funderIrish Research Council for Science, Engineering and Technology
dc.contributor.funderEuropean Commission
dc.date.accessioned2017-09-20T10:06:31Z
dc.date.available2017-09-20T10:06:31Z
dc.date.issued2015
dc.description.abstractAn alternative multi-frequency inversion-charge pumping (MFICP) technique was developed to directly separate the inversion charge density (N-inv) from the trapped charge density in high-k/InGaAs metal-oxide-semiconductor field-effect transistors (MOSFETs). This approach relies on the fitting of the frequency response of border traps, obtained from inversion-charge pumping measurements performed over a wide range of frequencies at room temperature on a single MOSFET, using a modified charge trapping model. The obtained model yielded the capture time constant and density of border traps located at energy levels aligned with the InGaAs conduction band. Moreover, the combination of MFICP and pulsed I-d-V-g measurements enabled an accurate effective mobility vs N-inv extraction and analysis. The data obtained using the MFICP approach are consistent with the most recent reports on high-k/InGaAs. (C) 2015 AIP Publishing LLC.en
dc.description.statusPeer revieweden
dc.description.versionPublished Versionen
dc.format.mimetypeapplication/pdfen
dc.identifier.articleid204107
dc.identifier.citationDjara, V., Cherkaoui, K., Negara, M. A. and Hurley, P. K. (2015) 'Multi-frequency inversion-charge pumping for charge separation and mobility analysis in high-k/InGaAs metal-oxide-semiconductor field-effect transistors', Journal of Applied Physics, 118(20), 204107 (7pp). doi: 10.1063/1.4936313en
dc.identifier.doi10.1063/1.4936313
dc.identifier.endpage7
dc.identifier.issn0021-8979
dc.identifier.issn1089-7550
dc.identifier.issued20
dc.identifier.journaltitleJournal of Applied Physicsen
dc.identifier.startpage1
dc.identifier.urihttps://hdl.handle.net/10468/4712
dc.identifier.volume118
dc.language.isoenen
dc.publisherAIP Publishingen
dc.relation.projectinfo:eu-repo/grantAgreement/SFI/SFI Strategic Research Cluster/07/SRC/I1172/IE/SRC FORME: Functional Oxides and Related Materials for Electronics/
dc.relation.projectinfo:eu-repo/grantAgreement/EC/FP7::SP1::ICT/619325/EU/Compound Semiconductors for 3D integration/COMPOSE3
dc.relation.projectinfo:eu-repo/grantAgreement/EC/FP7::SP1::ICT/619326/EU/Technology CAD for III-V Semiconductor-based MOSFETs/III-V-MOS
dc.relation.urihttp://aip.scitation.org/doi/10.1063/1.4936313
dc.rights© 2015 AIP Publishing LLC. This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. The following article appeared in Djara, V., Cherkaoui, K., Negara, M. A. and Hurley, P. K. (2015) 'Multi-frequency inversion-charge pumping for charge separation and mobility analysis in high-k/InGaAs metal-oxide-semiconductor field-effect transistors', Journal of Applied Physics, 118(20), 204107 (7pp). doi: 10.1063/1.4936313 and may be found at http://aip.scitation.org/doi/10.1063/1.4936313en
dc.subjectIN0.53GA0.47AS MOSFETsen
dc.subjectInductively coupled plasmaen
dc.subjectBand gapen
dc.subjectIII-V semiconductorsen
dc.subjectConduction bandsen
dc.subjectElectron-mobilityen
dc.subjectGate dielectricsen
dc.subjectInterface Trapsen
dc.subjectMos capacitanceen
dc.subjectExtractionen
dc.subjectDensityen
dc.subjectAL2O3en
dc.subjectInstabilityen
dc.subjectDevicesen
dc.subject~Tyndall National Institute - Journal Articles~en
dc.titleMulti-frequency inversion-charge pumping for charge separation and mobility analysis in high-k/InGaAs metal-oxide-semiconductor field-effect transistorsen
dc.typeArticle (peer-reviewed)en
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