Effect of the nitrogen incorporation and fast carrier dynamics in (In,Ga)AsN/GaP self-assembled quantum dots

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dc.contributor.authorGauthier, J. P.
dc.contributor.authorRobert, Cedric
dc.contributor.authorAlmosni, S.
dc.contributor.authorLeger, Y.
dc.contributor.authorPerrin, M.
dc.contributor.authorEven, J.
dc.contributor.authorBalocchi, A.
dc.contributor.authorCarrere, H.
dc.contributor.authorMarie, X.
dc.contributor.authorCornet, C.
dc.contributor.authorDurand, O.
dc.contributor.funderConseil Régional de Bretagne
dc.contributor.funderAgence Nationale de la Recherche
dc.date.accessioned2017-07-25T14:16:23Z
dc.date.available2017-07-25T14:16:23Z
dc.date.issued2014
dc.description.abstractWe report on the structural and optical properties of (In,Ga) AsN self-assembled quantum dots grown on GaP (001) substrate. A comparison with nitrogen free (In, Ga) As system is presented, showing a clear modification of growth mechanisms and a significant shift of the photoluminescence spectrum. Low temperature carrier recombination dynamics is studied by time-resolved photoluminescence, highlighting a drastic reduction of the characteristic decay-time when nitrogen is incorporated in the quantum dots. Room temperature photoluminescence is observed at 840 nm. These results reveal the potential of (In, Ga) AsN as an efficient active medium monolithically integrated on Si for laser applications. (C) 2014 AIP Publishing LLC.en
dc.description.sponsorshipRegion Bretagne (PONANT Project including FEDER funds); Agence Nationale de la Recherche (OPTOSI ANR (12-BS03-002-02))en
dc.description.statusPeer revieweden
dc.description.versionPublished Versionen
dc.format.mimetypeapplication/pdfen
dc.identifier.articleid243111
dc.identifier.citationGauthier, J.-P., Robert, C., Almosni, S., Léger, Y., Perrin, M., Even, J., Balocchi, A., Carrère, H., Marie, X., Cornet, C. and Durand, O. (2014) 'Effect of the nitrogen incorporation and fast carrier dynamics in (In,Ga)AsN/GaP self-assembled quantum dots', Applied Physics Letters, 105(24), pp. 243111. doi: 10.1063/1.4904939en
dc.identifier.doi10.1063/1.4904939
dc.identifier.endpage4
dc.identifier.issn0003-6951
dc.identifier.issn1077-3118
dc.identifier.issued24
dc.identifier.journaltitleApplied Physics Lettersen
dc.identifier.startpage1
dc.identifier.urihttps://hdl.handle.net/10468/4254
dc.identifier.volume105
dc.language.isoenen
dc.publisherAIP Publishingen
dc.relation.urihttp://aip.scitation.org/doi/abs/10.1063/1.4904939
dc.rights© 2014 AIP Publishing LLC. This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. The following article appeared in Gauthier, J.-P., Robert, C., Almosni, S., Léger, Y., Perrin, M., Even, J., Balocchi, A., Carrère, H., Marie, X., Cornet, C. and Durand, O. (2014) 'Effect of the nitrogen incorporation and fast carrier dynamics in (In,Ga)AsN/GaP self-assembled quantum dots', Applied Physics Letters, 105(24), pp. 243111 and may be found at http://aip.scitation.org/doi/abs/10.1063/1.4906106en
dc.subjectQuantum dotsen
dc.subjectIII-V semiconductorsen
dc.subjectPhotoluminescenceen
dc.subjectActivation energiesen
dc.subjectConduction bandsen
dc.titleEffect of the nitrogen incorporation and fast carrier dynamics in (In,Ga)AsN/GaP self-assembled quantum dotsen
dc.typeArticle (peer-reviewed)en
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