Effect of the nitrogen incorporation and fast carrier dynamics in (In,Ga)AsN/GaP self-assembled quantum dots

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Date
2014
Authors
Gauthier, J. P.
Robert, Cedric
Almosni, S.
Leger, Y.
Perrin, M.
Even, J.
Balocchi, A.
Carrere, H.
Marie, X.
Cornet, C.
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AIP Publishing
Published Version
10.1063/1.4904939
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Abstract
We report on the structural and optical properties of (In,Ga) AsN self-assembled quantum dots grown on GaP (001) substrate. A comparison with nitrogen free (In, Ga) As system is presented, showing a clear modification of growth mechanisms and a significant shift of the photoluminescence spectrum. Low temperature carrier recombination dynamics is studied by time-resolved photoluminescence, highlighting a drastic reduction of the characteristic decay-time when nitrogen is incorporated in the quantum dots. Room temperature photoluminescence is observed at 840 nm. These results reveal the potential of (In, Ga) AsN as an efficient active medium monolithically integrated on Si for laser applications. (C) 2014 AIP Publishing LLC.
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Keywords
Quantum dots , III-V semiconductors , Photoluminescence , Activation energies , Conduction bands
Citation
Gauthier, J.-P., Robert, C., Almosni, S., Léger, Y., Perrin, M., Even, J., Balocchi, A., Carrère, H., Marie, X., Cornet, C. and Durand, O. (2014) 'Effect of the nitrogen incorporation and fast carrier dynamics in (In,Ga)AsN/GaP self-assembled quantum dots', Applied Physics Letters, 105(24), pp. 243111. doi: 10.1063/1.4904939
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http://aip.scitation.org/doi/abs/10.1063/1.4904939
URI
https://hdl.handle.net/10468/4254
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Tyndall National Institute - Journal Articles
Copyright
© 2014 AIP Publishing LLC. This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. The following article appeared in Gauthier, J.-P., Robert, C., Almosni, S., Léger, Y., Perrin, M., Even, J., Balocchi, A., Carrère, H., Marie, X., Cornet, C. and Durand, O. (2014) 'Effect of the nitrogen incorporation and fast carrier dynamics in (In,Ga)AsN/GaP self-assembled quantum dots', Applied Physics Letters, 105(24), pp. 243111 and may be found at http://aip.scitation.org/doi/abs/10.1063/1.4906106