Reductive elimination of hypersilyl halides from zinc (II) complexes. Implications for electropositive metal thin film growth

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dc.contributor.authorSirimanne, Chatu T.
dc.contributor.authorKerrigan, Marissa M.
dc.contributor.authorMartin, Philip D.
dc.contributor.authorKanjolia, Ravindra K.
dc.contributor.authorElliott, Simon D.
dc.contributor.authorWinter, Charles H.
dc.contributor.funderScience Foundation Irelanden
dc.contributor.funderNational Science Foundation, United States
dc.contributor.funderSAFC Hitech, United States
dc.date.accessioned2015-09-28T14:38:01Z
dc.date.available2015-09-28T14:38:01Z
dc.date.issued2015-01-05
dc.date.updated2015-04-13T14:31:11Z
dc.description.abstractTreatment of Zn(Si(SiMe3)3)2 with ZnX2 (X = Cl, Br, I) in tetrahydrofuran (THF) at 23 °C afforded [Zn(Si(SiMe3)3)X(THF)]2 in 83–99% yield. X-ray crystal structures revealed dimeric structures with Zn2X2 cores. Thermogravimetric analyses of [Zn(Si(SiMe3)3)X(THF)]2 demonstrated a loss of coordinated THF between 50 and 155 °C and then single-step weight losses between 200 and 275 °C. The nonvolatile residue was zinc metal in all cases. Bulk thermolyses of [Zn(Si(SiMe3)3)X(THF)]2 between 210 and 250 °C afforded zinc metal in 97–99% yield, Si(SiMe3)3X in 91–94% yield, and THF in 81–98% yield. Density functional theory calculations confirmed that zinc formation becomes energetically favorable upon THF loss. Similar reactions are likely to be general for M(SiR3)n/MXn pairs and may lead to new metal-film-growth processes for chemical vapor deposition and atomic layer deposition.en
dc.description.sponsorshipScience Foundation Ireland (Grant 09/IN.1/I2628); National Science Foundation, United States (Grant CHE-1212574)en
dc.description.statusPeer revieweden
dc.description.versionSubmitted Versionen
dc.format.mimetypeapplication/pdfen
dc.identifier.citationSIRIMANNE, C. T., KERRIGAN, M. M., MARTIN, P. D., KANJOLIA, R. K., ELLIOTT, S. D. & WINTER, C. H. 2015. Reductive Elimination of Hypersilyl Halides from Zinc(II) Complexes. Implications for Electropositive Metal Thin Film Growth. Inorganic Chemistry, 54, 7-9. http://dx.doi.org/10.1021/ic502184fen
dc.identifier.doi10.1021/ic502184f
dc.identifier.endpage9en
dc.identifier.issn0020-1669
dc.identifier.issued1en
dc.identifier.journaltitleInorganic Chemistryen
dc.identifier.startpage7en
dc.identifier.urihttps://hdl.handle.net/10468/1991
dc.identifier.volume54en
dc.language.isoenen
dc.publisherAmerican Chemical Societyen
dc.relation.urihttp://pubs.acs.org/doi/suppl/10.1021/ic502184f
dc.rightsThis document is the unedited Author’s version of a Submitted Work that was subsequently accepted for publication in Inorganic Chemistry, copyright © American Chemical Society after peer review.en
dc.subjectChemical vapor depositionen
dc.subjectAtomic layer deposition (ALD)en
dc.titleReductive elimination of hypersilyl halides from zinc (II) complexes. Implications for electropositive metal thin film growthen
dc.typeArticle (peer-reviewed)en
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