Heterogeneous integration of InP etched facet lasers to silicon photonics by micro transfer printing

dc.check.embargoformatEmbargo not applicable (If you have not submitted an e-thesis or do not want to request an embargo)en
dc.check.infoNot applicableen
dc.check.opt-outNot applicableen
dc.check.reasonNot applicableen
dc.check.typeNo Embargo Required
dc.contributor.advisorCorbett, Brianen
dc.contributor.advisorRoycroft, Brendanen
dc.contributor.authorLoi, Ruggero
dc.contributor.funderScience Foundation Irelanden
dc.contributor.funderHorizon 2020en
dc.date.accessioned2019-09-18T10:55:13Z
dc.date.available2019-09-18T10:55:13Z
dc.date.issued2019
dc.date.submitted2019
dc.description.abstractPhotonics Integrated Circuits allow optical functionalities and interconnects with small footprint, large band -width and -density, low heat generation. The silicon photonics platform (SOI) offers excellent waveguiding properties, large-area wafers and a highly developed CMOS infrastructure matured with electronics. Nevertheless, the key function of light amplification is missing due to the indirect band-gap of silicon. The light has to be provided to the SOI from a separate direct band-gap III-V material. InP based devices work in the infrared optical window of the electromagnetic spectrum and can be heterogeneously integrated to the SOI. This research deals with the development of the first stand-alone InP Fabry-Perot lasers heterogeneously integrated to SOI by Micro Transfer Printing (µTP). The lasers are pre-fabricated and tested before transfer and are optimized to reach excellent optical, electrical and thermal performance. Lasers printed on Si substrates emit over 20 mW optical power, have threshold current of 16 mA and series resistance of 6 Ω; the thermal impedance of 38 K/W is half of that for the same laser printed directly on the SOI. The transfer printable InP ridge lasers have been designed as rectangular coupons with both contacts at the top and etched facets at the sidewalls. Two main release technologies based on the FeCl3:H2O (1:2) solution and a InGaAs or a InAlAs sacrificial layer were developed for releasing the devices from the original InP substrate with selectivity to InP greater than 4000 at 1 ◦C. The working principle of a polymer anchor system which restrains the devices to the substrate during the undercut were determined. The devices were printed on different silicon photonic substrates with excellent adhesion, with and without adhesive layers. A process for creating recesses into the SOI was developed to allow edge coupling the laser waveguide to the SOI or a polymer waveguide. High alignment accuracy along the three spatial directions can be achieved with alignment markers, reference walls and the interposition of a metal layer beneath the devices. This work shows a possible path for the achievement of a laser source for silicon photonics and it has been the basis for the integration of others InP devices to PICs by micro transfer printing.en
dc.description.statusNot peer revieweden
dc.description.versionAccepted Version
dc.format.mimetypeapplication/pdfen
dc.identifier.citationLoi, R. 2019. Heterogeneous integration of InP etched facet lasers to silicon photonics by micro transfer printing. PhD Thesis, University College Cork.en
dc.identifier.endpage170en
dc.identifier.urihttps://hdl.handle.net/10468/8562
dc.language.isoenen
dc.publisherUniversity College Corken
dc.relation.projectinfo:eu-repo/grantAgreement/SFI/SFI Research Centres/12/RC/2276/IE/I-PIC Irish Photonic Integration Research Centre/en
dc.rights© 2019, Ruggero Loi.en
dc.rights.urihttp://creativecommons.org/licenses/by-nc-nd/3.0/en
dc.subjectLaseren
dc.subjectInPen
dc.subjectMicro-transfer printingen
dc.subjectSilicon photonicsen
dc.subjectIntegrated photonicsen
dc.thesis.opt-outfalse
dc.titleHeterogeneous integration of InP etched facet lasers to silicon photonics by micro transfer printingen
dc.typeDoctoral thesisen
dc.type.qualificationlevelDoctoralen
dc.type.qualificationnamePhDen
ucc.workflow.supervisorbrian.corbett@tyndall.ie
Files
Original bundle
Now showing 1 - 1 of 1
Loading...
Thumbnail Image
Name:
LoiR_PhD2019.pdf
Size:
50.61 MB
Format:
Adobe Portable Document Format
Description:
Full Text E-thesis
License bundle
Now showing 1 - 1 of 1
Loading...
Thumbnail Image
Name:
license.txt
Size:
5.62 KB
Format:
Item-specific license agreed upon to submission
Description: