Improvement in top-gate MoS2 transistor performance due to high quality backside Al2O3 layer

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dc.check.date2018-07-21
dc.check.infoAccess to this article is restricted until 12 months after publication at the request of the publisher.en
dc.contributor.authorBolshakov, Pavel
dc.contributor.authorZhao, Peng
dc.contributor.authorAzcatl, Angelica
dc.contributor.authorHurley, Paul K.
dc.contributor.authorWallace, Robert M.
dc.contributor.authorYoung, Chadwin D.
dc.date.accessioned2017-07-27T15:05:54Z
dc.date.available2017-07-27T15:05:54Z
dc.date.issued2017-07-21
dc.date.updated2017-07-27T13:29:54Z
dc.description.statusPeer revieweden
dc.description.versionPublished Versionen
dc.format.mimetypeapplication/pdfen
dc.identifier.citationBolshakov, P., Zhao, P., Azcatl, A., Hurley, P. K., Wallace, R. M. and Young, C. D. (2017) 'Improvement in top-gate MoS2 transistor performance due to high quality backside Al2O3 layer', Applied Physics Letters, 111(3), pp. 032110. doi:10.1063/1.4995242en
dc.identifier.doi10.1063/1.4995242
dc.identifier.endpage32110-4en
dc.identifier.issn0003-6951
dc.identifier.issued3en
dc.identifier.journaltitleApplied Physics Lettersen
dc.identifier.startpage32110-1en
dc.identifier.urihttps://hdl.handle.net/10468/4278
dc.identifier.volume111en
dc.language.isoenen
dc.publisherAIP Publishingen
dc.rights© 2017, AIP Publishing. This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. The following article appeared in Appl. Phys. Lett. 111, 032110 (2017) and may be found at http://aip.scitation.org/doi/pdf/10.1063/1.4995242en
dc.subjectAluminaen
dc.subjectAnnealingen
dc.subjectCarrier mobilityen
dc.subjectHigh-k dielectric thin filmsen
dc.subjectMolybdenum compoundsen
dc.subjectMOSFETen
dc.subjectBipolar transistorsen
dc.subjectChemical compoundsen
dc.subjectInorganic compoundsen
dc.subjectDielectricsen
dc.subjectChemical bondsen
dc.titleImprovement in top-gate MoS2 transistor performance due to high quality backside Al2O3 layeren
dc.typeArticle (peer-reviewed)en
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