Synthesis of large-area crystalline MoS2 by sputter deposition and pulsed laser annealing

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dc.contributor.authorDi Russo, Enricoen
dc.contributor.authorTonon, Alessandroen
dc.contributor.authorMischianti, Ariannaen
dc.contributor.authorSgarbossa, Francescoen
dc.contributor.authorColeman, Emmaen
dc.contributor.authorGity, Farzanen
dc.contributor.authorPanarella, Lucaen
dc.contributor.authorSheehan, Brendanen
dc.contributor.authorLebedev, Vasily A.en
dc.contributor.authorDe Salvador, Davideen
dc.contributor.authorDuffy, Rayen
dc.contributor.authorNapolitani, Enricoen
dc.contributor.funderHorizon 2020en
dc.contributor.funderUniversità degli Studi di Padovaen
dc.date.accessioned2025-01-29T09:37:36Z
dc.date.available2025-01-29T09:37:36Z
dc.date.issued2023-05-05en
dc.description.abstractThe wafer-scale synthesis of layered transitional metal dichalcogenides presenting good crystal quality and homogeneous coverage is a challenge for the development of next-generation electronic devices. This work explores a fairly unconventional growth method based on a two-step process consisting in sputter deposition of stochiometric MoS2 on Si/SiO2 substrates followed by nanosecond UV (248 nm) pulsed laser annealing. Large-scale 2H-MoS2 multi-layer films were successfully synthetized in a N2-rich atmosphere thanks to a fine-tuning of the laser annealing parameters by varying the number of laser pulses and their energy density. The identification of the optimal process led to the success in achieving a (002)-oriented nanocrystalline MoS2 film without performing post-sulfurization. It is noteworthy that the spatial and temporal confinement of laser annealing keeps the Si/SiO2 substrate temperature well below the back-end-of-line temperature limit of Si CMOS technology (770 K). The synthesis method described here can speed up the integration of large-area 2D materials with Si-based devices, paving the way for many important applications.en
dc.description.sponsorshipUniversità degli Studi di Padova (Grant UNIPD-ISR 2017 ‘SENSITISE’)en
dc.description.statusPeer revieweden
dc.description.versionAccepted Versionen
dc.format.mimetypeapplication/pdfen
dc.identifier.citationDi Russo, E., Tonon, A., Mischianti, A., Sgarbossa, F., Coleman, E., Gity, F., Panarella, L., Sheehan, B., Lebedev, V. A., De Salvador, D. and Duffy, R. (2023) 'Synthesis of large-area crystalline MoS2 by sputter deposition and pulsed laser annealing', ACS Applied Electronic Materials, 5(5), pp.2862-2875. https://doi.org/10.1021/acsaelm.3c00362en
dc.identifier.doi10.1021/acsaelm.3c00362en
dc.identifier.eissn2637-6113en
dc.identifier.endpage2875en
dc.identifier.issn2637-6113en
dc.identifier.issued5en
dc.identifier.journaltitleACS Applied Electronic Materialsen
dc.identifier.startpage2862en
dc.identifier.urihttps://hdl.handle.net/10468/16912
dc.identifier.volume5en
dc.language.isoenen
dc.publisherACS Publicationsen
dc.relation.ispartofACS Applied Electronic Materialsen
dc.relation.projectinfo:eu-repo/grantAgreement/EC/H2020::RIA/871130/EU/Access to European Infrastructure for Nanoelectronics/ASCENTPlusen
dc.rights© 2023, American Chemical Society. This document is the Accepted Manuscript version of a Published Work that appeared in final form in ACS Applied Electronic Materials, 5(5), pp.2862-2875, after technical editing by the publisher. To access the final edited and published work see: https://doi.org/10.1021/acsaelm.3c00362en
dc.subjectMoS2en
dc.subjectLaser annealingen
dc.subjectSputtering depositionen
dc.subjectFET devicesen
dc.subjectHeat flow calculationsen
dc.titleSynthesis of large-area crystalline MoS2 by sputter deposition and pulsed laser annealingen
dc.typeArticle (peer-reviewed)en
oaire.citation.issue5en
oaire.citation.volume5en
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