Synthesis of large-area crystalline MoS2 by sputter deposition and pulsed laser annealing
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Accepted Version
Supplementary Information
Date
2023-05-05
Authors
Di Russo, Enrico
Tonon, Alessandro
Mischianti, Arianna
Sgarbossa, Francesco
Coleman, Emma
Gity, Farzan
Panarella, Luca
Sheehan, Brendan
Lebedev, Vasily A.
De Salvador, Davide
Journal Title
Journal ISSN
Volume Title
Publisher
ACS Publications
Published Version
Abstract
The wafer-scale synthesis of layered transitional metal dichalcogenides presenting good crystal quality and homogeneous coverage is a challenge for the development of next-generation electronic devices. This work explores a fairly unconventional growth method based on a two-step process consisting in sputter deposition of stochiometric MoS2 on Si/SiO2 substrates followed by nanosecond UV (248 nm) pulsed laser annealing. Large-scale 2H-MoS2 multi-layer films were successfully synthetized in a N2-rich atmosphere thanks to a fine-tuning of the laser annealing parameters by varying the number of laser pulses and their energy density. The identification of the optimal process led to the success in achieving a (002)-oriented nanocrystalline MoS2 film without performing post-sulfurization. It is noteworthy that the spatial and temporal confinement of laser annealing keeps the Si/SiO2 substrate temperature well below the back-end-of-line temperature limit of Si CMOS technology (770 K). The synthesis method described here can speed up the integration of large-area 2D materials with Si-based devices, paving the way for many important applications.
Description
Keywords
MoS2 , Laser annealing , Sputtering deposition , FET devices , Heat flow calculations
Citation
Di Russo, E., Tonon, A., Mischianti, A., Sgarbossa, F., Coleman, E., Gity, F., Panarella, L., Sheehan, B., Lebedev, V. A., De Salvador, D. and Duffy, R. (2023) 'Synthesis of large-area crystalline MoS2 by sputter deposition and pulsed laser annealing', ACS Applied Electronic Materials, 5(5), pp.2862-2875. https://doi.org/10.1021/acsaelm.3c00362
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Copyright
© 2023, American Chemical Society. This document is the Accepted Manuscript version of a Published Work that appeared in final form in ACS Applied Electronic Materials, 5(5), pp.2862-2875, after technical editing by the publisher. To access the final edited and published work see: https://doi.org/10.1021/acsaelm.3c00362