Demonstration of genuine surface inversion for the p/n-In0.3Ga0.7Sb-Al2O3 MOS system with in situ H2 plasma cleaning

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dc.check.date2020-12-02
dc.check.infoAccess to this article is restricted until 12 months after publication by request of the publisher.en
dc.contributor.authorMillar, David A. J.
dc.contributor.authorPeralagu, Uthayasankaran
dc.contributor.authorLi, Xu
dc.contributor.authorSteer, Matthew J.
dc.contributor.authorFu, Yen-Chun
dc.contributor.authorHurley, Paul K.
dc.contributor.authorThayne, Iain G.
dc.contributor.funderHorizon 2020en
dc.date.accessioned2019-12-20T11:48:20Z
dc.date.available2019-12-20T11:48:20Z
dc.date.issued2019-12-02
dc.date.updated2019-12-20T11:41:20Z
dc.description.abstractThe results of an investigation into the impact of in situ H2 plasma exposure on the electrical properties of the p/n-In0.3 Ga0.7 Sb-Al2O3 interface are presented. Samples were processed using a clustered inductively coupled plasma reactive ion etching and atomic layer deposition tool. Metal oxide semiconductor capacitors were fabricated subsequent to H2 plasma processing and Al2O3 deposition, and the corresponding capacitance-voltage and conductance-voltage measurements were analyzed quantitatively via the simulation of an equivalent circuit model. Interface state (Dit) and border trap (Nbt) densities were extracted for samples subjected to the optimal process, with a minimum Dit of 1.73×1012 eV−1 cm−2 located at ∼110 meV below the conduction band edge and peak Nbt approximately aligned with the valence and conduction band edges of 3×1019 cm−3 and 6.5×1019 cm−3, respectively. Analysis of the inversion response in terms of the extraction of the activation energy of minority carriers in inversion (p-type) and the observation of characteristics that pertain to minority carriers being supplied from an external inversion region (n-type) unequivocally demonstrate that the Fermi level is unpinned and that genuine surface inversion is observed for both doping polarities.en
dc.description.statusPeer revieweden
dc.description.versionPublished Versionen
dc.format.mimetypeapplication/pdfen
dc.identifier.articleid231602en
dc.identifier.citationMillar, D. A. J., Peralagu, U., Li, X., Steer, M. J., Fu, Y.-C., Hurley, P. K. and Thayne, I. G. (2019) 'Demonstration of genuine surface inversion for the p/n-In0.3Ga0.7Sb-Al2O3 MOS system with in situ H2 plasma cleaning', Applied Physics Letters, 115(23), 231602 (5pp). doi: 10.1063/1.5122731en
dc.identifier.doi10.1063/1.5122731en
dc.identifier.eissn1077-3118
dc.identifier.endpage5en
dc.identifier.issn0003-6951
dc.identifier.issued23en
dc.identifier.journaltitleApplied Physics Lettersen
dc.identifier.startpage1en
dc.identifier.urihttps://hdl.handle.net/10468/9443
dc.identifier.volume115en
dc.language.isoenen
dc.publisherAIP Publishingen
dc.relation.projectinfo:eu-repo/grantAgreement/EC/H2020::RIA/688784/EU/Integration of III-V Nanowire Semiconductors for next Generation High Performance CMOS SOC Technologies/INSIGHTen
dc.relation.urihttps://aip.scitation.org/doi/abs/10.1063/1.5122731
dc.rights© 2019, the Authors. Published under license by AIP Publishing. This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. This article appeared as: Millar, D. A. J., Peralagu, U., Li, X., Steer, M. J., Fu, Y.-C., Hurley, P. K. and Thayne, I. G. (2019) 'Demonstration of genuine surface inversion for the p/n-In0.3Ga0.7Sb-Al2O3 MOS system with in situ H2 plasma cleaning', Applied Physics Letters, 115(23), 231602 (5pp), doi: 10.1063/1.5122731, and may be found at https://doi.org/10.1063/1.5122731en
dc.subjectH2 plasma exposureen
dc.subjectFermi levelen
dc.subjectSurface inversionen
dc.subjectp/n-In0.3 Ga0.7 Sb-Al2O3en
dc.titleDemonstration of genuine surface inversion for the p/n-In0.3Ga0.7Sb-Al2O3 MOS system with in situ H2 plasma cleaningen
dc.typeArticle (peer-reviewed)en
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