Sub-100 nm Feature Definition Optimization using Cold Cs Beam Exposed Self-Assembled Monolayers on Au

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dc.contributor.author O'Dwyer, Colm
dc.date.accessioned 2013-02-28T14:38:59Z
dc.date.available 2013-02-28T14:38:59Z
dc.date.copyright 2004
dc.date.issued 2004-01
dc.identifier.citation O’Dwyer, C. (2004) 'Sub-100 nm Feature Definition Optimization using Cold Cs Beam Exposed Self-Assembled Monolayers on Au', 206th Meeting of the Electrochemical Society: Nanoscale Devices, Materials, and Biological Systems: Fundamental and Applications. Hilton Hawaiian Village, Honolulu, Hawaii, 3-8 October. New Jersey: The Electrochemical Society, 13, pp. 411-430. en
dc.identifier.volume 13 en
dc.identifier.startpage 411 en
dc.identifier.endpage 430 en
dc.identifier.isbn 1-56677-456-X
dc.identifier.uri http://hdl.handle.net/10468/1004
dc.description.abstract The results of a study into the dependency of SAM coverage, subsequent post-etch pattern definition and minimum feature size on the quality of the Au substrate used in both physical mask and optical mask atomic nanolithographic experiments are presented in this paper. In comparison, sputtered Au substrates yield much smoother surfaces and a higher density of {111} oriented grains than evaporated Au surfaces. Phase imaging with an atomic force microscope shows that the quality and percentage coverage of uniform alkanethiol monolayer adsorption was much greater for sputtered Au surfaces. Exposure of the monolayer with a laser-cooled Cs beam allowed determination of the minimum Cs dose (2 monolayers) to expose the SAM with lateral force microscopy. Suitable wet-etching, with etch rates of 2.2 nm min-1, results in optimized pattern definition. Utilizing these optimizations, features as small as 50 nm were achieved using both a sub-100 nm physical mask and optical standing wave mask. en
dc.format.mimetype application/pdf en
dc.language.iso en en
dc.publisher The Electrochemical Society en
dc.relation.ispartof 206th Meeting of the Electrochemical Society Conference, Honolulu, Hawaii, 3-8 Oct, 2004
dc.relation.uri http://www.electrochem.org/dl/pv/published/2004/2004.htm
dc.rights © The Electrochemical Society, Inc. 2004. All rights reserved. Except as provided under U.S. copyright law, this work may not be reproduced, resold, distributed, or modified without the express permission of The Electrochemical Society (ECS). The archival version of this work was published in O’Dwyer, C. (2004) 'Sub-100 nm Feature Definition Optimization using Cold Cs Beam Exposed Self-Assembled Monolayers on Au', 206th Meeting of the Electrochemical Society: Nanoscale Devices, Materials, and Biological Systems: Fundamental and Applications. Honolulu, Hawaii, 3-8 October. New Jersey: The Electrochemical Society, 13, pp. 411-430. en
dc.subject SAM coverage en
dc.subject Au substrate en
dc.subject Nanolithographic en
dc.subject Atomic force microscope en
dc.subject Alkanethiol monolayer en
dc.subject Laser-cooled Cs beam en
dc.subject Wet-etching en
dc.subject.lcsh Electrochemistry en
dc.subject.lcsh Materials science en
dc.title Sub-100 nm Feature Definition Optimization using Cold Cs Beam Exposed Self-Assembled Monolayers on Au en
dc.type Conference item en
dc.internal.authorurl http://research.ucc.ie/profiles/D004/codwyer en
dc.internal.authorcontactother Colm O'Dwyer, Chemistry, University College Cork, Cork, Ireland. +353-21-490-3000 Email: c.odwyer@ucc.ie en
dc.internal.availability Full text available en
dc.date.updated 2012-11-30T12:08:29Z
dc.description.version Submitted Version en
dc.internal.rssid 162343069
dc.description.status Not peer reviewed en
dc.identifier.journaltitle Proc. Electrochem. Soc. en
dc.internal.copyrightchecked No. CORA - ROMEO Accepted Version and set statement en
dc.internal.licenseacceptance Yes en
dc.internal.conferencelocation Honolulu, Hawaii, USA en
dc.internal.IRISemailaddress c.odwyer@ucc.ie en


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