Effect of low temperature RF plasma treatment on electrical properties of junctionless InGaAs MOSFETs

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© 2019, The Electrochemical Society. Published by IOP Publishing. This is an author-created, un-copyedited version of an article accepted for publication in ECS Journal of Solid State Science and Technology. The publisher is not responsible for any errors or omissions in this version of the manuscript or any version derived from it. The Version of Record is available online at 10.1149/2.0181902jss. Except where otherwise noted, this item's license is described as © 2019, The Electrochemical Society. Published by IOP Publishing. This is an author-created, un-copyedited version of an article accepted for publication in ECS Journal of Solid State Science and Technology. The publisher is not responsible for any errors or omissions in this version of the manuscript or any version derived from it. The Version of Record is available online at 10.1149/2.0181902jss.
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