Effect of low temperature RF plasma treatment on electrical properties of junctionless InGaAs MOSFETs

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dc.contributor.author Gomeniuk, Y. V.
dc.contributor.author Gomeniuk, Y. Y.
dc.contributor.author Rudenko, T. E.
dc.contributor.author Okholin, P. N.
dc.contributor.author Glotov, V. I.
dc.contributor.author Nazarova, T. M.
dc.contributor.author Djara, Vladimir
dc.contributor.author Cherkaoui, Karim
dc.contributor.author Hurley, Paul K.
dc.contributor.author Nazarov, A. N.
dc.date.accessioned 2020-07-03T08:42:55Z
dc.date.available 2020-07-03T08:42:55Z
dc.date.issued 2019-03-02
dc.identifier.citation Gomeniuk, Y. V., Gomeniuk, Y. Y., Rudenko, T. E., Okholin, P. N., Glotov, V. I., Nazarova, T. M., Djara, V., Cherkaoui, K., Hurley, P. K. and Nazarov, A. N. (2019) 'Effect of low temperature RF plasma treatment on electrical properties of junctionless InGaAs MOSFETs', ECS Journal of Solid State Science and Technology, 8(2), pp. Q24-Q31. doi: 10.1149/2.0181902jss en
dc.identifier.volume 8 en
dc.identifier.issued 2 en
dc.identifier.startpage 24 en
dc.identifier.endpage 31 en
dc.identifier.issn 2162-8769
dc.identifier.uri http://hdl.handle.net/10468/10204
dc.identifier.doi 10.1149/2.0181902jss en
dc.description.abstract In this paper, we study the effect of low-temperature RF plasma treatment in forming gas (10%H2+90%N2) on the electrical characteristics of junctionless MOSFETs with n-In0.53Ga0.47As channel and an Al2O3 gate dielectric. The impact of plasma power density on the device parameters is investigated. It is found that RF plasma annealing with a low power density (0.5 W/cm2) at 150°C for 10 min provides substantial improvement of source/drain contacts resistance and the carrier mobility resulting in a considerable increase of the on-state current and transconductance. It also improves the subthreshold slope and reduces the fixed positive charge in Al2O3 under the gate, shifting the threshold voltage toward positive values. It is demonstrated that non-thermal factors play a principle role in modification of electrical properties of the JL MOSFETs under RF plasma treatment. Such treatment may be an efficient tool for the improvement of the performance of the advanced MOSFETs with III-V channel materials. en
dc.format.mimetype application/pdf en
dc.language.iso en en
dc.publisher IOP Publishing en
dc.rights © 2019, The Electrochemical Society. Published by IOP Publishing. This is an author-created, un-copyedited version of an article accepted for publication in ECS Journal of Solid State Science and Technology. The publisher is not responsible for any errors or omissions in this version of the manuscript or any version derived from it. The Version of Record is available online at 10.1149/2.0181902jss. en
dc.rights.uri https://creativecommons.org/licenses/by-nc-nd/3.0/ en
dc.subject Junctionless MOSFETs en
dc.subject Low-temperature RF plasma treatment en
dc.subject Non-thermal factors en
dc.title Effect of low temperature RF plasma treatment on electrical properties of junctionless InGaAs MOSFETs en
dc.type Article (peer-reviewed) en
dc.internal.authorcontactother Karim Cherkaoui, Tyndall Micronano Electronics, University College Cork, Cork, Ireland. +353-21-490-3000 Email: karim.cherkaoui@tyndall.ie en
dc.internal.availability Full text available en
dc.date.updated 2020-07-03T08:17:29Z
dc.description.version Accepted Version en
dc.internal.rssid 522594754
dc.contributor.funder Horizon 2020 en
dc.contributor.funder Science Foundation Ireland en
dc.description.status Peer reviewed en
dc.identifier.journaltitle ECS Journal of Solid State Science and Technology en
dc.internal.copyrightchecked Yes
dc.internal.licenseacceptance Yes en
dc.internal.IRISemailaddress karim.cherkaoui@tyndall.ie en
dc.relation.project info:eu-repo/grantAgreement/EC/H2020::RIA/654384/EU/Access to European Nanoelectronics Network/ASCENT en
dc.relation.project info:eu-repo/grantAgreement/SFI/SFI Investigator Programme/15/IA/3131/IE/Investigating Emerging 2D Semiconductor Technology/ en
dc.identifier.eissn 2162-8777


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© 2019, The Electrochemical Society. Published by IOP Publishing. This is an author-created, un-copyedited version of an article accepted for publication in ECS Journal of Solid State Science and Technology. The publisher is not responsible for any errors or omissions in this version of the manuscript or any version derived from it. The Version of Record is available online at 10.1149/2.0181902jss. Except where otherwise noted, this item's license is described as © 2019, The Electrochemical Society. Published by IOP Publishing. This is an author-created, un-copyedited version of an article accepted for publication in ECS Journal of Solid State Science and Technology. The publisher is not responsible for any errors or omissions in this version of the manuscript or any version derived from it. The Version of Record is available online at 10.1149/2.0181902jss.
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