Conformal and non-destructive doping towards gate-all-around nanowire devices
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Full Text E-thesis
Date
2020-09-01
Authors
Meaney, Fintan
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Volume Title
Publisher
University College Cork
Published Version
Abstract
Due to the approach of fundamental 2D topological limits, scaling of silicon transistors towards GAA devices will be required.
This thesis will discuss why continued scaling towards GAA devices will require novel doping processes and suggest possible technologies to suit this application.
Chapter 1 will detail an introduction to this topic and discuss current possible solution to 3D doping as well as explain some of the different techniques uses throughout the work
Chapter 2 discusses gas phase doping as a promising candidate as it has a superior ability to conformally dope tight 3D architectures, when compared to ion implantation. This process needs to be optimised to find a balance between the potential to etch on one hand and deposit potentially unwanted layers on the other. Further work currently ongoing to limit the thermal budget of these process will also play a critical role in their applications in modern semiconductor processing where temperature sensitive materials are ever more present.
Chapter 3 presents a one step process that simplifies traditional ion implantation while also displaying a possible route toward high levels of activation at lower temperatures. The electrical characterisation of these devices will show how this process needs further optimisation to reach conductivity levels required for GAA transistors.
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Keywords
Silicon , Doping , Nanowires
Citation
Meaney, F. 2020. Conformal and non-destructive doping towards gate-all-around nanowire devices. MRes Thesis, University College Cork.