Conformal and non-destructive doping towards gate-all-around nanowire devices

Show simple item record

dc.contributor.advisor Duffy, Ray en Meaney, Fintan 2020-09-25T10:08:06Z 2020-09-25T10:08:06Z 2020-09-01 2020-09-01
dc.identifier.citation Meaney, F. 2020. Conformal and non-destructive doping towards gate-all-around nanowire devices. MRes Thesis, University College Cork. en
dc.identifier.endpage 64 en
dc.description.abstract Due to the approach of fundamental 2D topological limits, scaling of silicon transistors towards GAA devices will be required. This thesis will discuss why continued scaling towards GAA devices will require novel doping processes and suggest possible technologies to suit this application. Chapter 1 will detail an introduction to this topic and discuss current possible solution to 3D doping as well as explain some of the different techniques uses throughout the work Chapter 2 discusses gas phase doping as a promising candidate as it has a superior ability to conformally dope tight 3D architectures, when compared to ion implantation. This process needs to be optimised to find a balance between the potential to etch on one hand and deposit potentially unwanted layers on the other. Further work currently ongoing to limit the thermal budget of these process will also play a critical role in their applications in modern semiconductor processing where temperature sensitive materials are ever more present. Chapter 3 presents a one step process that simplifies traditional ion implantation while also displaying a possible route toward high levels of activation at lower temperatures. The electrical characterisation of these devices will show how this process needs further optimisation to reach conductivity levels required for GAA transistors. en
dc.format.mimetype application/pdf en
dc.language.iso en en
dc.publisher University College Cork en
dc.rights © 2020, Fintan Meaney. en
dc.rights.uri en
dc.subject Silicon en
dc.subject Doping en
dc.subject Nanowires en
dc.title Conformal and non-destructive doping towards gate-all-around nanowire devices en
dc.type Masters thesis (Research) en
dc.type.qualificationlevel Masters en
dc.type.qualificationname MSc - Master of Science en
dc.internal.availability Full text available en
dc.description.version Accepted Version en
dc.contributor.funder Enterprise Ireland en
dc.contributor.funder Applied Materials en
dc.description.status Not peer reviewed en Electrical and Electronic Engineering en
dc.internal.conferring Autumn 2020 en
dc.internal.ricu Tyndall National Institute en
dc.availability.bitstream openaccess

Files in this item

This item appears in the following Collection(s)

Show simple item record

© 2020, Fintan Meaney. Except where otherwise noted, this item's license is described as © 2020, Fintan Meaney.
This website uses cookies. By using this website, you consent to the use of cookies in accordance with the UCC Privacy and Cookies Statement. For more information about cookies and how you can disable them, visit our Privacy and Cookies statement