On the interpretation of MOS impedance data in both series and parallel circuit topologies

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Date
2021-05-31
Authors
Caruso, Enrico
Lin, Jun
Monaghan, Scott
Cherkaoui, Karim
Floyd, Liam
Gity, Farzan
Palestri, Pierpaolo
Esseni, David
Selmi, Luca
Hurley, Paul K.
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Elsevier
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Abstract
We investigate the interplay between the series (S) and parallel (P) equivalent circuit representations of the MOS system conductance (G) and capacitance (C) in inversion. Experimental and simulated data for Si and InGaAs MOSCAPs are firstly analyzed mathematically. It is found that by interpreting the measured data in both the series and parallel mode, five independent values are obtained for the magnitude and frequency of the maxima and minima points of the −ωdCS,P/dω and GS,P/ω functions versus angular frequency (ω). The significance and application of the approach is presented and discussed.
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Keywords
MOS characterization , Parameter extraction , Oxide thickness , Doping , Minority carrier lifetime , Impedance spectroscopy , TCAD
Citation
Caruso, E., Lin, J., Monaghan, S., Cherkaoui, K., Floyd, L., Gity, F., Palestri, P., Esseni, D., Selmi, L. and Hurley, P. K. (2021) 'On the interpretation of MOS impedance data in both series and parallel circuit topologies', Solid-State Electronics, 185, pp. 108098 (5 pp). doi: 10.1016/j.sse.2021.108098