Development of germanium/silicon integration for near infrared detection

Show simple item record

dc.contributor.advisor Corbett, Brian en
dc.contributor.advisor Morrison, Alan P. en
dc.contributor.author Gity, Farzan
dc.date.accessioned 2013-10-14T09:22:35Z
dc.date.available 2013-10-14T09:22:35Z
dc.date.issued 2013
dc.date.submitted 2013
dc.identifier.citation Gity, F. 2013. Development of germanium/silicon integration for near infrared detection. PhD Thesis, University College Cork. en
dc.identifier.endpage 167
dc.identifier.uri http://hdl.handle.net/10468/1250
dc.description.abstract Silicon (Si) is the base material for electronic technologies and is emerging as a very attractive platform for photonic integrated circuits (PICs). PICs allow optical systems to be made more compact with higher performance than discrete optical components. Applications for PICs are in the area of fibre-optic communication, biomedical devices, photovoltaics and imaging. Germanium (Ge), due to its suitable bandgap for telecommunications and its compatibility with Si technology is preferred over III-V compounds as an integrated on-chip detector at near infrared wavelengths. There are two main approaches for Ge/Si integration: through epitaxial growth and through direct wafer bonding. The lattice mismatch of ~4.2% between Ge and Si is the main problem of the former technique which leads to a high density of dislocations while the bond strength and conductivity of the interface are the main challenges of the latter. Both result in trap states which are expected to play a critical role. Understanding the physics of the interface is a key contribution of this thesis. This thesis investigates Ge/Si diodes using these two methods. The effects of interface traps on the static and dynamic performance of Ge/Si avalanche photodetectors have been modelled for the first time. The thesis outlines the original process development and characterization of mesa diodes which were fabricated by transferring a ~700 nm thick layer of p-type Ge onto n-type Si using direct wafer bonding and layer exfoliation. The effects of low temperature annealing on the device performance and on the conductivity of the interface have been investigated. It is shown that the diode ideality factor and the series resistance of the device are reduced after annealing. The carrier transport mechanism is shown to be dominated by generation–recombination before annealing and by direct tunnelling in forward bias and band-to-band tunnelling in reverse bias after annealing. The thesis presents a novel technique to realise photodetectors where one of the substrates is thinned by chemical mechanical polishing (CMP) after bonding the Si-Ge wafers. Based on this technique, Ge/Si detectors with remarkably high responsivities, in excess of 3.5 A/W at 1.55 μm at −2 V, under surface normal illumination have been measured. By performing electrical and optical measurements at various temperatures, the carrier transport through the hetero-interface is analysed by monitoring the Ge band bending from which a detailed band structure of the Ge/Si interface is proposed for the first time. The above unity responsivity of the detectors was explained by light induced potential barrier lowering at the interface. To our knowledge this is the first report of light-gated responsivity for vertically illuminated Ge/Si photodiodes. The wafer bonding approach followed by layer exfoliation or by CMP is a low temperature wafer scale process. In principle, the technique could be extended to other materials such as Ge on GaAs, or Ge on SOI. The unique results reported here are compatible with surface normal illumination and are capable of being integrated with CMOS electronics and readout units in the form of 2D arrays of detectors. One potential future application is a low-cost Si process-compatible near infrared camera. en
dc.description.sponsorship Science Foundation Ireland (SFI Grant 07/SRC/I1173: Photonics Integration from Atoms to Systems (PIFAS)) en
dc.format.mimetype application/pdf en
dc.language.iso en en
dc.publisher University College Cork en
dc.rights © 2013. Farzan Gity en
dc.rights.uri http://creativecommons.org/licenses/by-nc-nd/3.0/ en
dc.subject Germanium silicon integration en
dc.subject Semiconductor device – design, simulation and modelling en
dc.subject Near infrared photodetector en
dc.subject Avalanche photodiode (APD) en
dc.subject Wafer bonding and epitaxy en
dc.subject.lcsh Integrated circuits en
dc.subject.lcsh Germanium diodes en
dc.subject.lcsh Silicon diodes en
dc.subject.lcsh Semiconductors en
dc.subject.lcsh Detectors--Design and construction en
dc.title Development of germanium/silicon integration for near infrared detection en
dc.type Doctoral thesis en
dc.type.qualificationlevel Doctoral en
dc.type.qualificationname PHD (Engineering) en
dc.internal.availability Full text available en
dc.check.info No embargo required en
dc.description.version Accepted Version
dc.contributor.funder Science Foundation Ireland en
dc.description.status Not peer reviewed en
dc.internal.school Electrical and Electronic Engineering en
dc.internal.school Tyndall National Institute en
dc.check.type No Embargo Required
dc.check.reason No embargo required en
dc.check.opt-out Not applicable en
dc.thesis.opt-out false
dc.check.embargoformat Not applicable en
ucc.workflow.supervisor brian.corbett@tyndall.ie
dc.internal.conferring Autumn Conferring 2013 en


Files in this item

This item appears in the following Collection(s)

Show simple item record

© 2013. Farzan Gity Except where otherwise noted, this item's license is described as © 2013. Farzan Gity
This website uses cookies. By using this website, you consent to the use of cookies in accordance with the UCC Privacy and Cookies Statement. For more information about cookies and how you can disable them, visit our Privacy and Cookies statement